XIX. On the electro-dynamic qualities of metals:—Effects of magnetization on the electric conductivity of nickel and of iron

Thomson, William

doi:10.1098/rspl.1856.0144

Cited by 367 publications

(94 citation statements)

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“…TMR is a particular manifestation of a magnetoresistance that yields a change of electrical resistance in the presence of an external magnetic field. 10 Historically, the anisotropic magnetoresistance in bulk ferromagnets such as Fe and Ni was discovered first, dating back to the experiments of Lord Kelvin (Thomson, 1857). Due to spin-orbit interaction, electrical resistivity changes with the relative direction of the charge current (for example, parallel or perpendicular) with respect to the direction of magnetization.…”

Section: Spin-polarized Transport and Magnetoresistive Effectsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics. CONTENTS

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Section: Spin-polarized Transport and Magnetoresistive Effectsmentioning

confidence: 99%

Spintronics: Fundamentals and applications

2004

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“…), there are several technologies available for the realization of magnetic sensing devices 90 . These include for example Hall sensors 91 , anisotropic magnetoresistance elements 92 , magnetic tunnel junctions 93 and fluxgate magnetometers 94 . Magnetic thin films revealing a giant magnetoresistance (GMR) effect are able to vary their electrical resistance by several tens of percent upon application of an external magnetic field 95 .…”

Section: Technological Approachmentioning

confidence: 99%

Stretchable Magnetoelectronics

et al. 2011

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Abstract:In this work, stretchable magnetic sensorics is successfully established by combining metallic thin films revealing a giant magnetoresistance effect with elastomeric materials. Stretchability of the magnetic nanomembranes is achieved by specific morphologic features (e.g. wrinkles), which accommodate the applied tensile deformation while maintaining the electrical and magnetic integrity of the sensor device. The entire development, from the demonstration of the world-wide first elastically stretchable magnetic sensor to the realization of a technology platform for robust, ready-touse elastic magnetoelectronics with fully strain invariant properties, is described. The prepared soft giant magnetoresistive devices exhibit the same sensing performance as on conventional rigid supports, but can be stretched uniaxially or biaxially reaching strains of up to 270% and endure over 1,000 stretching cycles without fatigue. The comprehensive magnetoelectrical characterization upon tensile deformation is correlated with in-depth structural investigations of the sensor morphology transitions during stretching.With their unique mechanical properties, the elastic magnetoresistive sensor elements readily conform to ubiquitous objects of arbitrary shapes including the human skin. This feature leads electronic skin systems beyond imitating the characteristics of its natural archetype and extends their cognition to static and dynamic magnetic fields that by no means can be perceived by human beings naturally.Various application fields of stretchable magnetoelectronics are proposed and realized throughout this work. The developed sensor platform can equip soft electronic systems with navigation, orientation, motion tracking and touchless control capabilities. A variety of novel technologies, like smart textiles, soft robotics and actuators, active medical implants and soft consumer electronics will benefit from these new magnetic functionalities. Michael Melzer: Stretchable MagnetoelectronicsOutline 4

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“…The relevant interface property that determines the spin current transport thereby is the spin mixing conductance. Nevertheless, there has been an ongoing debate regarding the physical origin of the measurement data acquired in spin Seebeck and SMR experiments due to possible contamination with anomalous Nernst effect [19][20][21] or anisotropic magnetoresistance [22,23] caused by static proximity polarization of the normal metal [23]. To settle this issue, a rigorous check of the consistency of the spin-current based physical models across all three effects is needed.…”

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Experimental Test of the Spin Mixing Interface Conductivity Concept

et al. 2013

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We perform a quantitative, comparative study of the spin pumping, spin Seebeck and spin Hall magnetoresistance effects, all detected via the inverse spin Hall effect in a series of over 20 yttrium iron garnet/Pt samples. Our experimental results fully support present, exclusively spin currentbased, theoretical models using a single set of plausible parameters for spin mixing conductance, spin Hall angle and spin diffusion length. Our findings establish the purely spintronic nature of the aforementioned effects and provide a quantitative description in particular of the spin Seebeck effect.Pure spin currents present a new paradigm in spintronics [1, 2] and spin caloritronics [3]. In particular, spin currents are the origin of spin pumping [4,5], the spin Seebeck effect [6,7] and the spin Hall magnetoresistance (SMR) [8][9][10]. Taken alone, all these effects have been extensively studied, both experimentally [6-9, 11-13] and theoretically [4,[14][15][16][17][18]. From a theoretical point of view, all these effects are governed by the generation of a current of angular momentum via a non-equilibrium process. The flow of this spin current across a ferromagnet/normal metal interface can then be detected. The relevant interface property that determines the spin current transport thereby is the spin mixing conductance. Nevertheless, there has been an ongoing debate regarding the physical origin of the measurement data acquired in spin Seebeck and SMR experiments due to possible contamination with anomalous Nernst effect [19][20][21] or anisotropic magnetoresistance [22,23] caused by static proximity polarization of the normal metal [23]. To settle this issue, a rigorous check of the consistency of the spin-current based physical models across all three effects is needed. If possible contamination effects are absent, according to the spin mixing conductance concept [24], there should exist a generalized Ohm's law between the interfacial spin current and the energy associated with the corresponding non-equilibrium process. This relation should invariably hold for the spin pumping, spin Seebeck and spin Hall magnetoresistance effects, as they are all based on the generation and detection of interfacial, nonequilibrium spin currents. We here put forward heuristic arguments that are strongly supported by experimental evidence for a scaling law that links all aforementioned spin(calori)tronic effects on a fundamental level and allows to trace back their origin to pure spin currents. (c) The spin Hall magnetoresistance is due to the torque exerted on M by an appropriately polarized Js which yields a change in the reflected spin current J r s . The interconversion between Js (J r s ) and the charge currents Jc (J r c ) are due to the (inverse) spin Hall effect in the normal metal.[schematically depicted in Fig. 1(a)], we place YIG / Pt bilayers in a microwave cavity operated at ν = 9.85 GHz to resonantly excite magnetization dynamics. The emission of a spin current density J s across the bilayer interface into the Pt provides...

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XIX. On the electro-dynamic qualities of metals:—Effects of magnetization on the electric conductivity of nickel and of iron

Cited by 367 publications

References 0 publications

Spintronics: Fundamentals and applications

Spintronics: Fundamentals and applications

Stretchable Magnetoelectronics

Experimental Test of the Spin Mixing Interface Conductivity Concept

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