XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs

Sameshima, Toshiyuki; Sekiya, M.; Usui, S.

doi:10.7567/ssdm.1985.c-3-8ln

Cited by 270 publications

(35 citation statements)

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“…1 treatments (high-temperature sintering or laser annealing), which are not compatible with flexible substrates such as poly (ethylene terephthalate) (PET) and paper (12,14,15,(17)(18)(19)26). One solution suggested for dealing with this problem is to fabricate the device on a high-temperature tolerant substrate first and then transfer it onto a flexible substrate.…”

Section: Significancementioning

confidence: 99%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

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Printed electronics are considered for wireless electronic tags and sensors within the future Internet-of-things (IoT) concept. As a consequence of the low charge carrier mobility of present printable organic and inorganic semiconductors, the operational frequency of printed rectifiers is not high enough to enable direct communication and powering between mobile phones and printed e-tags. Here, we report an all-printed diode operating up to 1.6 GHz. The device, based on two stacked layers of Si and NbSi 2 particles, is manufactured on a flexible substrate at low temperature and in ambient atmosphere. The high charge carrier mobility of the Si microparticles allows device operation to occur in the charge injection-limited regime. The asymmetry of the oxide layers in the resulting device stack leads to rectification of tunneling current. Printed diodes were combined with antennas and electrochromic displays to form an all-printed e-tag. The harvested signal from a Global System for Mobile Communications mobile phone was used to update the display. Our findings demonstrate a new communication pathway for printed electronics within IoT applications.

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Section: Significancementioning

confidence: 99%

All-printed diode operating at 1.6 GHz

Sani

Robertsson

Cooper

et al. 2014

Proc. Natl. Acad. Sci. U.S.A.

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“…XCIMER laser crystallization of a-Si is an attractive technique for realizing low-temperature 350 C poly Si thin-film transistors (TFTs) on glass [1], [2]. The field-effect electron mobility, , of the poly Si TFTs fabricated by conventional excimer laser crystallization is around 100 cm V s, which limits the use of poly Si TFTs for other circuitries, such as DAC and pixel memory.…”

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confidence: 99%

Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain

Rana

Ishihara

Hiroshima

et al. 2005

IEEE Trans. Electron Devices

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Abstract-To obtain high-performance thin-film transistors (TFTs), a comprehensive study of the channel position of TFTs inside a location-controlled grain was carried out. The location of the grain is precisely controlled by the -Czochralski process using an excimer laser. The grain was grown from a thin Si column embedded in SiO 2 (grain filter). The characteristics of the TFTs drastically improved when the channel region was not centered above the grain filter. With TFTs whose current-flow direction is parallel to the radial direction of the grain filter, an electron mobility and subthreshold swing of 600 cm 2 V s and 0.21 V/dec respectively were obtained.

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“…In this regard, low-temperature fabrication of high-quality Si thin film on a heterogeneous substrate like glass or plastic is indispensable. Research has expanded on improving the performance of polycrystalline silicon (poly-Si) using a low-temperature process like the excimer process, poly-Si fabricated by solid-phase crystallization (SPC) while continuing to lower the temperature, and a thin-film transistor (TFT) formed in a pseudo-singlecrystal Si grain [3][4][5][6][7]. The electron mobility has already been reported to exceed 500 cm 2 /Vs.…”

Section: Introductionmentioning

confidence: 99%

Proposal and examination of new type of TFT with tunneling dielectric film at both ends of channel fabrication area

Matsuo

Kihara

Yamamoto

et al. 2005

Electron Comm Jpn Pt II

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SUMMARYAn important aspect of a thin-film transistor (TFT) is reducing the current flowing between the source and drain when the gate is off. In this research, we proposed a new TFT, the tunneling dielectric TFT (TDTFT), that has a thin dielectric film on both ends of the channel region, and studied its operation through simulations. We calculated the drain current (I off ) when the gate is off, the drain currentdrain voltage characteristic, and the transconductance in the TDTFT. When the thin dielectric film is a 0.5-nm-thick TiO 2 film, I off of the TDTFT is about six digits less than that of a conventional TFT. We also studied the double silicon on insulator (DSOI) structure which improves the drive power of the TFT even for a thin Si film. When a TDTFT is fabricated on DSOI, simple calculations showed that the on-off ratio was several times better than that of a conventional TFT.

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XeCl Excimer Laser Annealing used in the Fabrication of Poly-Si TFTs

Cited by 270 publications

References 0 publications

All-printed diode operating at 1.6 GHz

All-printed diode operating at 1.6 GHz

Dependence of Single-Crystalline Si TFT Characteristics on the Channel Position Inside a Location-Controlled Grain

Proposal and examination of new type of TFT with tunneling dielectric film at both ends of channel fabrication area

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