Xe-arc flash annealing of indium tin oxide thin-films prepared on glass backplanes

Kim, Yoonsuk; Park, Seung Ho; Kim, Byung-Kuk; Kim, Hyoung June; Hwang, Jin‐Ha

doi:10.1016/j.ijheatmasstransfer.2015.07.132

Cited by 16 publications

(4 citation statements)

References 39 publications

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“…Xe-FLA is one of the thermal annealing methods that can heat thin films in a very short time without damaging the substrate. Various studies have been reported on Xe-FLA based on the heat treatment effect [38][39][40]44 .…”

Section: Resultsmentioning

confidence: 99%

“…To realize a superior transparent flexible ITO-Ag-ITO electrode with high transmittance and high conductivity, while ensuring high-throughput, a postannealing process with a low thermal budget is required to provide high transmittance and high conductivity, while ensuring high-throughput. Digital thermal processing using Xenon flash lamp annealing (Xe-FLA) is an ideal curing method that can be applied to heat-sensitive substrates while retaining the effects of previous heat treatments on thin films [37][38][39][40] . Many previous reports have examined the digital thermal processing effects on ITO and amorphous silicon thin films during Xe-FLA irradiation 37 .…”

mentioning

confidence: 99%

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Rapid photonic curing effects of xenon flash lamp on ITO–Ag–ITO multilayer electrodes for high throughput transparent electronics

Zhao

Rose²,

Kwon

et al. 2023

Sci Rep

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High-throughput transparent and flexible electronics are essential technologies for next-generation displays, semiconductors, and wearable bio-medical applications. However, to manufacture a high-quality transparent and flexible electrode, conventional annealing processes generally require 5 min or more at a high temperature condition of 300 °C or higher. This high thermal budget condition is not only difficult to apply to general polymer-based flexible substrates, but also results in low-throughput. Here, we report a high-quality transparent electrode produced with an extremely low thermal budget using Xe-flash lamp rapid photonic curing. Photonic curing is an extremely short time (~ μs) process, making it possible to induce an annealing effect of over 800 °C. The photonic curing effect was optimized by selecting the appropriate power density, the irradiation energy of the Xe-flash lamp, and Ag layer thickness. Rapid photonic curing produced an ITO–Ag–ITO electrode with a low sheet resistance of 6.5 ohm/sq, with a high luminous transmittance of 92.34%. The low thermal budget characteristics of the rapid photonic curing technology make it suitable for high-quality transparent electronics and high-throughput processes such as roll-to-roll.

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Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Rapid photonic curing effects of xenon flash lamp on ITO–Ag–ITO multilayer electrodes for high throughput transparent electronics

Zhao

Rose²,

Kwon

et al. 2023

Sci Rep

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“…It was due to the difference in thermal expansion of ITO and PI leading to fracture of ITO film. The introduction of a backreflector for transparent ITO glass can improve the annealing effect [85]. ITO was deposited directly on the glass substrate without any intervening layer by RF magnetron sputtering.…”

Section: Vacuum Deposited Thin Filmsmentioning

confidence: 99%

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Noh¹,

Kim²,

Lee³

et al. 2022

Nanotechnology

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The intense pulsed light (IPL) post-treatment process has attracted great attention in the device fabrication due to its versatility and rapidity particularly for solution process functional structures in devices, flexible/printed electronics, and continuous manufacturing process. The metal oxide materials inherently have multi-functionality and have been widely used in form of thin films or nanostructures in device application such as thin-film transistors, light-emitting diodes, solar cells, supercapacitors, etc. The IPL treatment enhances the physical and/or chemical properties of the functional metal oxide through photothermal effects. However, most metal oxides are transparent to most range of visible light and require more energy for post-treatment. In this review, we have summarized the IPL post-treatment processes for metal oxide thin films and nanostructures in device applications. The sintering and annealing of metal oxides using IPL improved the device performances by employing additional light absorbing layer or back-reflector. The IPL process becomes an innovative versatile post-treatment process in conjunction with multi-functional metal oxides in near-future device applications.

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“…FLA has been combined with ion activation in acceptor-or donor-doped polycrystalline Si thin films and ITO thin films on transparent or flexible substrates with appropriate modifications in optical illumination systems. 27,29,30 Recently a few studies employed the FLA process to improve the performance of oxide TFTs in terms of empirical aspects. [31][32][33] Those previous investigations do not offer the comprehensive information on the optical illumination in association with the oxide-based TFTs in terms of temperature and device parameters.…”

mentioning

confidence: 99%

Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Kim

Kim²,

Kim

et al. 2017

ECS J. Solid State Sci. Technol.

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Amorphous nitrogenated indium-gallium-zinc oxide (a-IGZO:N) thin films were deposited on highly doped silicon (n+Si) wafer substrates and heat-treated by millisecond flash lamp annealing (FLA) at different preheating temperatures to enhance the electrical characteristics of oxynitride thin film transistors (TFTs). A one-dimensional conduction/radiation heat transfer simulation was conducted to predict the temperature fields in the Si substrate, which indicated that the film temperatures during FLA instantaneously rose above 700 • C. The electrical characteristics of the a-IGZO:N TFTs were compared with those produced by conventional furnace annealing of one hour. As a result of the FLA process, a remarkable improvement in the TFT device performance was observed in terms of the electrical output characteristics and transfer curves of the a-IGZO:N TFTs. Morphological analyses were conducted using X-ray diffraction, atomic force microscopy, and field emission scanning electron microscopy, indicating the possibility of partial crystallization of the a-IGZO:N channel layers under high-temperature annealing conditions, but the best TFT performance was found for the amorphous phase of IGZO:N.

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Xe-arc flash annealing of indium tin oxide thin-films prepared on glass backplanes

Cited by 16 publications

References 39 publications

Rapid photonic curing effects of xenon flash lamp on ITO–Ag–ITO multilayer electrodes for high throughput transparent electronics

Rapid photonic curing effects of xenon flash lamp on ITO–Ag–ITO multilayer electrodes for high throughput transparent electronics

A review on intense pulsed light process as post-treatment for metal oxide thin films and nanostructures for device application

Application of Flash Lamp Annealing on Nitrogen-Doped Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

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