The authors present a study on growth mechanism and crystalline structure of zinc blende (ZB)/wurtzite (WZ) polytypic InAs nanostrutures grown on Si-substrate using x-ray diffraction, Raman spectroscopy, and extended x-ray absorption fine structure (EXAFS) spectroscopy. A significant change in the bond length is observed in the short range crystal structure as an effect of the interfacial strain, and the structure exhibits disorder due to twin defect/stacking fault formation at the homointerfaces of ZB/WZ segments in the polytypic crystalline structure, which is related to the ZB:WZ phase ratio. The average ratio of ZB and WZ crystal phase present in the nanostructures is estimated through EXAFS technique. This study opens up an alternate pathway for quantitative estimation of crystal phases over a large area of polytypic samples with distribution in size as well as morphology. Raman spectroscopy study uses E2H and transverse-optical phonon modes to identify the WZ and ZB structural phases of these polytypic nanostructures. It reveals that the interfacial strain shifts the transverse and longitudinal optical phonon frequency significantly and the frequency shifts are proportional to the concentration ratio of ZB and WZ crystal phases. The ZB:WZ ratio derived from EXAFS technique is correlated with Raman spectroscopy results. The long range crystalline structure of the nanostructures is also explored using x-ray diffraction technique, and the observations are corroborating with EXAFS and Raman spectroscopy results. The present study not only elucidate in-depth understanding of the local structure of polytypic InAs but also suggests that careful engineering of interfacial strain through controlled growth can further improve the performance of the polytypic ZB/WZ homointerface based optoelectronic devices.