X-ray standing-wave study of an Sb-terminated GaAs(001)-(2×4) surface

Abstract

The Sb-Sb dimer structure of a 2X4 reconstructed Sb/CxaAs(001) surface was investigated by corelevel photoelectron collection mode of back reAection soft x-ray standing-wave technique. Sb atoms occupy the bridge site forming bonds with two underlying Ga atoms and form symmetric Sb-Sb dimers lin-0 ing up in the [110]direction. The first-layer Sb atomic plane is estimated to be l. 81+0.02 A above the

The structure of Sb-terminated GaAs(001) surfaces

“…To create the Sb-covered (2×4) reconstrucresolution core-level X-ray photoelectron spectroscopy ( XPS) [9], STM [11], reflectance anisotropy tion, an Sb-(2×8) surface was slowly reheated to 460°C in UHV over the course of about 10 min. spectroscopy (RAS ) [12], X-ray standing wave ( XSW ) measurements [10,13], and theoretical calAfter cooling, samples were transferred in UHV to a surface analysis chamber for characterization culations [12,[15][16][17]. To our knowledge, all the structures proposed for the (2×4) to date include by either STM or XPS [19].…”

“…As such, Sb-terminated have started with clean, As-terminated (2×4)-GaAs represents the initial surface on which subsereconstructed surfaces that had been covered with quent heteroepitaxial layers are grown. multiple layers of Sb at low temperature and then Sb-terminated GaAs is also the starting surface annealed in vacuum to gradually desorb the Sb for the growth of self-assembled III-Sb quantum film [6,[9][10][11][12][13]. With increasing temperature, reflection high energy electron diffraction (RHEED)…”

Enhanced cation-substituted p-type doping in GaP from dual surfactant effects

“…2b). This has been demonstrated experimentally by surface photo reflection spectra [24] and is supported by first-principles calculations [20]. To exclude the possible surfactant enhancement effect of H, we at first did not include H on the surface.…”

A soft x-ray standing wave measurement system for analyzing compound semiconductor surfaces prepared by molecular beam epitaxy

“…Furthermore the goniometer system was also improved for the soft-XSW triangulation studies. [15][16][17][18] Figure 1 schematically shows a top view of the developed apparatus, which consists of the fast entry chamber ͑load-lock chamber͒, the transfer chamber, the MBE growth chamber, and the analysis chamber which is connected to NTT's synchrotron radiation beam line. Samples can be prepared in the MBE chamber, and transferred through the transfer chamber to the analysis chamber without being exposed to the air.…”

“…XSW using synchrotron radiation soft x rays has recently been carried out at various facilities. [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] When we use soft x rays as an incident beam, the larger cross sections of softer x rays for light-element atoms, such as Si and S, ensure higher emission intensity from monolayer-order quantities of these atoms, and photoelectrons and Auger electrons can be collected with sufficient statistics and energy resolution. Furthermore backreflection XSW, in which the incident photon energy of soft x rays is scanned instead of the incident angle, can be used for nonperfect substrate systems.…”