X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique

Kobayashi, Kenji; Yamaguchi, Atsushi; Kimura, Shigeru; Sunakawa, Hajime; Kimura, Akitaka; Usui, Akira

doi:10.1143/jjap.38.l611

Cited by 44 publications

(30 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3b. Recently, similar crystallographic tilts have been observed in lateral epitaxial overgrowths of GaN [11,12] and it has been suggested that the possible causes were factors like mask densification, etching and/or chemical instability which could lead to stresses sufficient to induce plastic deformation or a crystallographic tilt at the growth temperatures used, thereby relaxing the stresses in the layer [13]. In the growth of an AlN interlayer at a low temperature of 550 °C, a continuous amorphous layer would be expected to be formed; Akasaki et al [14] reported on the formation of an amorphous-like structure during lowtemperature AlN growth (600 °C).…”

Section: Methodssupporting

confidence: 69%

Growth of crack‐free high‐quality GaN on Si(111) using a low‐temperature AlN interlayer: observation of tilted domain structures in the AlN interlayer

Kim

Kang

et al. 2003

phys. stat. sol. (c)

View full text Add to dashboard Cite

We report on the growth of crack-free high-quality GaN layers on Si(111) using a low-temperature AlN interlayer (LT-AlN IL) between GaN epilayers by ultrahigh vacuum chemical vapor deposition. The use of a thin LT-AlN IL resulted in the complete elimination of cracks and significant improvements in structural and optical properties of the GaN layer. The GaN epilayer containing the LT-AlN IL exhibited a strong band-edge emission with the line width of 26.5 meV at room-temperature. Additional distinct domains with a tilt angle of ±0.9° in the LT-AlN IL, found by synchrotron X-ray diffraction, are believed to play a key role in the effective relaxation of thermal stress and the reduction of threading dislocations.

show abstract

Section: Methodssupporting

confidence: 69%

Growth of crack‐free high‐quality GaN on Si(111) using a low‐temperature AlN interlayer: observation of tilted domain structures in the AlN interlayer

Kim

Kang

et al. 2003

phys. stat. sol. (c)

View full text Add to dashboard Cite

show abstract

“…Due to the weak scattering and extensive beam spill-off from the sample such measurements in the grazing incidence in-plane X-ray diffraction (GIIXD) geometry have been avoided in the laboratory and those reported have had poor signal and signal-to-noise ratio [6]. However, it has been shown recently that by use of a microfocus X-ray source and focusing optics, very high signals and good signal-to-noise can be obtained [7].…”

mentioning

confidence: 99%

Direct, Independent Measurement of Twist and Tilt Mosaic as a Function of Thickness in Epitaxial GaN

Lafford¹,

Parbrook

Tanner

2002

phys. stat. sol. (c)

View full text Add to dashboard Cite

The twist and tilt mosaics in a series of GaN epitaxial films grown by metal-organic vapour-phase epitaxy (MOVPE) have been measured directly by grazing incidence in-plane X-ray diffraction and in the standard symmetric high resolution setting. The variation in tilt mosaic with layer thickness fits well the model of Ayers. A similarly good fit to the same function for the twist mosaic dependence on epilayer thickness is found, indicating that the ratio of edge to screw dislocations remains constant for all films.

show abstract

“…This is principally due to the apparent growth of highly misorientated features within the epilayer as indicated by arrows B and C. These features correspond directly to highly misorientated features on the substrate (arrows B 0 and C 0 ). Additionally, it has previously been observed in the case of GaAs ELO on GaAs [14], that the ELO SiO 2 stripes can produce very high stresses in the underlying semiconductor. This can be observed as an array of vertically orientated stripes of the order of hundreds of microns long.…”

Section: Resultsmentioning

confidence: 93%

Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

McNally

Tuomi

Lowney

et al. 2001

phys. stat. sol. (a)

View full text Add to dashboard Cite

Section transmission white beam X-ray topography was applied to the evaluation of the growth of GaN on sapphire using the epitaxial lateral overgrowth (ELO) technique. Using openings in 100 nm thick SiO 2 windows, a new GaN growth took place, which resulted in nominal overgrowth thicknesses of 6.8 mm. Measurements of the recorded Laue section topographs revealed misorientation between the epilayer and the substrate. Neglecting the misorientation contribution due to the 30 o rotation of the epilayer with respect to the substrate, the misorientation mechanism was found to be a consequence of lattice rotation and dilatation. In the case of the ELO sample, these parameters varied with the stripe/window dimensions. The quality of the ELO epilayer is improved when compared to the non-ELO sample, though some local deviations from lattice coherence were observed. These results were complemented by observations made using X-ray diffraction and transmission electron microscopy.

show abstract

X-Ray Rocking Curve Determination of Twist and Tilt Angles in GaN Films Grown by an Epitaxial-Lateral-Overgrowth Technique

Cited by 44 publications

References 10 publications

Growth of crack‐free high‐quality GaN on Si(111) using a low‐temperature AlN interlayer: observation of tilted domain structures in the AlN interlayer

Growth of crack‐free high‐quality GaN on Si(111) using a low‐temperature AlN interlayer: observation of tilted domain structures in the AlN interlayer

Direct, Independent Measurement of Twist and Tilt Mosaic as a Function of Thickness in Epitaxial GaN

Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

Contact Info

Product

Resources

About