Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

McNally, Patrick J.; Tuomi, T.; Lowney, D.; Jacobs, Koen; Danilewsky, A.N.; Rantamäki, R.; O’Hare, Michael; Considine, L.

doi:10.1002/1521-396x(200106)185:2<373::aid-pssa373>3.0.co;2-h

Cited by 4 publications

(3 citation statements)

References 16 publications

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“…Fig. 1 shows the setup for the experimental procedure; it can be seen that the incident beam is diffracted at different depths within the sample (only the two external surfaces are shown in the schematic), so providing direct depth information for defects within the sample (McNally et al, 2001;Tanner, 1989). Fig.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

et al. 2011

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In the semiconductor industry, wafer handling introduces micro-cracks at the wafer edge and the causal relationship of these cracks to wafer breakage is a difficult task. By way of understanding the wafer breakage process, a series of nano-indents were introduced both into 20 × 20 mm (100) wafer pieces and into whole wafers as a means of introducing controlled strain. Visualization of the three-dimensional structure of crystal defects has been demonstrated. The silicon samples were then treated by various thermal anneal processes to initiate the formation of dislocation loops around the indents. This article reports the three-dimensional X-ray diffraction imaging and visualization of the structure of these dislocations. A series of X-ray section topographs of both the indents and the dislocation loops were taken at the ANKA Synchrotron, Karlsruhe, Germany. The topographs were recorded on a CCD system combined with a high-resolution scintillator crystal and were measured by repeated cycles of exposure and sample translation along a direction perpendicular to the beam. The resulting images were then rendered into three dimensions utilizing open-source three-dimensional medical tomography algorithms that show the dislocation loops formed. Furthermore this technique allows for the production of a video (avi) file showing the rotation of the rendered topographs around any defined axis. The software also has the capability of splitting the image along a segmentation line and viewing the internal structure of the strain fields.

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Section: Experimental Methodsmentioning

confidence: 99%

“…One of the advantages of using the ST technique is that it can reveal the location and depth of defects in the crystal (Authier et al, 1996;Bowen & Tanner, 1998;McNally et al, 2001;Tanner, 1989). This can be observed in Fig.…”

Section: Figurementioning

confidence: 99%

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

et al. 2011

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“…Synchrotron X-ray topography has also been applied to structural studies of epitaxic layers (Haseno È hrl et al, 2002;McNally et al, 2001;Rantama È ki et al, 1998;Rantama È ki, Tuomi, Zytkiewicz, Dobosz & McNally, 1999;Rantama È ki, Tuomi, Zytkiewicz, Domagala et al, 1999). Fig.…”

Section: Epitaxic Layer Structuresmentioning

confidence: 99%

Synchrotron X-ray topography of electronic materials

Tuomi

2002

J Synchrotron Radiat

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Large-area transmission, transmission section, large-area backre¯ection, back-re¯ection section and grazing-incidence topography are the geometries used when recording high-resolution X-ray diffraction images with synchrotron radiation from a bending magnet, a wiggler or an undulator of an electron or a positron storage ring. Defect contrast can be kinematical, dynamical or orientational even in the topographs recorded on the same ®lm at the same time. In this review article limited to static topography experiments, examples of defect studies on electronic materials cover the range from voids and precipitates in almost perfect¯oat-zone and Czochralski silicon, dislocations in gallium arsenide grown by the liquid-encapsulated Czochralski technique, the vapour-pressure controlled Czochralski technique and the vertical-gradient freeze technique, stacking faults and micropipes in silicon carbide to mis®t dislocations in epitaxic heterostructures. It is shown how synchrotron X-ray topographs of epitaxic laterally overgrown gallium arsenide layer structures are successfully explained by orientational contrast.

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Dislocations at the interface between sapphire and GaN

Lankinen¹,

Lang²,

Suihkonen³

et al. 2007

J Mater Sci: Mater Electron

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GaN layers grown by metal organic vapour phase epitaxy on sapphire were imaged by synchrotron radiation X-ray topography. The threading dislocations could not be resolved in the topographs due to their high density, but a smaller density of about 10 5 cm -2 misfit dislocations were seen in the interface between GaN and sapphire by using large-area backreflection topography. The misfit dislocation images in the topographs form a well-resolved cellular network, in which the average cell size is roughly 30 µm. Different cell shapes in the misfit dislocation networks are observed on different samples.

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Epitaxial Lateral Overgrowth of GaN on Sapphire - An Examination of Epitaxy Quality Using Synchrotron X-Ray Topography

Cited by 4 publications

References 16 publications

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon

Synchrotron X-ray topography of electronic materials

Dislocations at the interface between sapphire and GaN

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