X-ray photoelectron study of the effect of the composition of the initial gas phase on changes in the electronic structure of hexagonal boron nitride films obtained by PECVD from borazine

Il’inchik, E. A.; Merenkov, I. S.

doi:10.1134/s0022476616040065

Cited by 4 publications

(8 citation statements)

References 36 publications

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“…This can be attributed to the removal of surface contaminations during annealing. Additional peak at 398.8 eV in the N1s XPS spectra of the annealed samples corresponds to the change in the spatial arrangement of boron and nitrogen atoms due to oxidation [39]. The more intense peaks at 398.8 eV in the N1s spectrum and at 191.8 eV in the B1s spectrum indicate lower oxidation resistivity of the wavy h-BN nanowalls.…”

Section: Thermal Stabilitymentioning

confidence: 97%

“…The main peak centered at 190.8 eV was attributed to the boron atoms surrounded by three nitrogen atoms as in the structure of h-BN [37]. The peaks centered at 191.8 and 189.5 eV can be assigned to boron atoms simultaneously bonded with nitrogen and oxygen (N-B-O) [38] or carbon (N-B-C) [39], respectively. The density of carbon-containing bonds was higher in wavy nanowalls, possibly due to deeper decomposition of the precursor at high synthesis temperature.…”

Section: Bonding States and Elemental Compositionmentioning

confidence: 98%

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Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

et al. 2018

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Dimensionality and orientation of hexagonal boron nitride (h-BN) nanosheets are promising to create and control their unique properties for diverse applications. However, low-temperature deposition of vertically oriented h-BN nanosheets is a significant challenge. Here we report on the low-temperature plasma synthesis of maze-like h-BN nanowalls (BNNWs) from a mixture of triethylamine borane (TEAB) and ammonia at temperatures as low as 400 °C. The maze-like BNNWs contained vertically aligned stacks of h-BN nanosheets. Wavy h-BN nanowalls with randomly oriented nanocrystalline structure are also fabricated. Simple and effective control of morphological type of BNNWs by the deposition temperature is demonstrated. Despite the lower synthesis temperature, thermal stability and oxidation resistivity of the maze-like BNNWs are higher than for the wavy nanowalls. The structure and oxidation of the nanowalls was found to be the critical factor for their thermal stability and controlled luminescence properties. Cytotoxic study demonstrated significant antibacterial effect of both maze-like and wavy h-BN nanowalls against E. coli. The reported results reveal a significant potential of h-BN nanowalls for a broad range of applications from electronics to biomedicine.

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Section: Thermal Stabilitymentioning

confidence: 97%

Section: Bonding States and Elemental Compositionmentioning

confidence: 98%

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

et al. 2018

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“…Previously we presented the results of deposition by the PECVD method from a mixture of borazine and ammonia at a temperature of below 700 °C on Si(100) substrate, and a structural investigation of BNNWs [13,14]. Despite the fact that borazine is considered to be an ideal precursor for boron nitride deposition due to the B/N ratio being equal, it was shown that for a plasma-enhanced process, a mixture of borazine and ammonia in the ratio of 1:1 was a prerequisite for obtaining BN stoichiometric composition [15].…”

Section: Introductionmentioning

confidence: 99%

Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

2017

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Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (BNH) and ammonia (NH) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

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“…The deconvolution of X-ray photoelectron spectroscopy (XPS) peaks was performed based on recently published data. 31 We believe the growth mechanism of vertically oriented h-BN nanowalls suggested earlier for the Si substrate 29 can be appropriated to our case due to the silicon particles significantly outperforming nanowalls in size. Briefly, a 3−5 nm thick amorphous interfacial layer is formed on the silicon particle surface during the initial step.…”

Section: ■ Experimental Sectionmentioning

confidence: 66%

“…The elemental composition of h-BN nanowalls was then determined by X-ray photoelectron spectroscopy (Thermo Fisher Scientific Escalab 250Xi; see Figure S3). The deconvolution of X-ray photoelectron spectroscopy (XPS) peaks was performed based on recently published data …”

Section: Methodsmentioning

confidence: 99%

Hierarchical Hexagonal Boron Nitride Nanowall-Decorated Silicon Nanoparticles for Tunable Ink-Free Coloring

Bataille

Merenkov

Yaroshenko

et al. 2022

ACS Appl. Nano Mater.

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Nanomaterials with tunable optical properties have emerged as active components for advanced nanophotonic devices. Herein, the fabrication of hierarchical nanostructures through the integration of various tunable nanomaterials for diverse applications remains a challenge. Here, a two-step process consisting of the synthesis of silicon nanoparticles (Si NPs) via laser ablation followed by plasma-enhanced chemical vapor deposition of hexagonal-boron-nitride (h-BN) nanowalls has been implemented to form hierarchical Si@h-BN NPs. Experimental and numerical analyses confirm that h-BN decoration modulates the color and brightness of the hierarchical NPs (i.e., shape, intensity, and spectral width of intrinsic optical resonances). Moreover, the color palette of the resulting Si@h-BN NPs can be remotely controlled by infrared laser irradiation. We reveal that this control is related to the modification of the complex morphology of the hierarchical Si@h-BN NPs through the mutual influence of Si NP and h-BN on each other. These results open a way for utilizing hierarchical nanostructures for light manipulation at the nanometer scale for optical data storage and ink-free coloring.

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X-ray photoelectron study of the effect of the composition of the initial gas phase on changes in the electronic structure of hexagonal boron nitride films obtained by PECVD from borazine

Cited by 4 publications

References 36 publications

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

Hierarchical Hexagonal Boron Nitride Nanowall-Decorated Silicon Nanoparticles for Tunable Ink-Free Coloring

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