Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

Merenkov, I. S.; Косинова, М. Л.; Maximovskii, E. A.

doi:10.1088/1361-6528/aa677b

Cited by 12 publications

(8 citation statements)

References 37 publications

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“…We found the deposition temperature is critical parameter of morphology transformation. Our previous studies demonstrate that the h-BN nanowalls obtained by PECVD from borazine were structurally similar to the wavy nanowalls but they had the morphology of "maze-like" type [28,61]. We consider that the low-temperature highly oriented growth of the BNNWs demonstrated in the present study was possible mainly due to the particular chemical properties of the gas system containing organoboron compound and ammonia during PECVD process.…”

Section: Structural Featuressupporting

confidence: 51%

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

et al. 2018

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Dimensionality and orientation of hexagonal boron nitride (h-BN) nanosheets are promising to create and control their unique properties for diverse applications. However, low-temperature deposition of vertically oriented h-BN nanosheets is a significant challenge. Here we report on the low-temperature plasma synthesis of maze-like h-BN nanowalls (BNNWs) from a mixture of triethylamine borane (TEAB) and ammonia at temperatures as low as 400 °C. The maze-like BNNWs contained vertically aligned stacks of h-BN nanosheets. Wavy h-BN nanowalls with randomly oriented nanocrystalline structure are also fabricated. Simple and effective control of morphological type of BNNWs by the deposition temperature is demonstrated. Despite the lower synthesis temperature, thermal stability and oxidation resistivity of the maze-like BNNWs are higher than for the wavy nanowalls. The structure and oxidation of the nanowalls was found to be the critical factor for their thermal stability and controlled luminescence properties. Cytotoxic study demonstrated significant antibacterial effect of both maze-like and wavy h-BN nanowalls against E. coli. The reported results reveal a significant potential of h-BN nanowalls for a broad range of applications from electronics to biomedicine.

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Section: Structural Featuressupporting

confidence: 51%

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

et al. 2018

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“…This is supported by the high growth rate, high porosity and the presence of N-H bonds which are known to break above 300 °C 66 . This is also consistent with the observation of Merenkov et al 67 who reported formation of BN nanosheets from 400 °C and smooth films below 300 °C. STEM allowed us to obtain some complementary information to SEM by removing the Si substrate.…”

Section: Figsupporting

confidence: 93%

Plasma CVD of B-C-N Thin Films Using Triethylboron in Argon-Nitrogen Plasma

Souqui¹,

Pališaitis²,

Högberg³

et al. 2020

Preprint

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<div> Amorphous boron-carbon-nitrogen (B-C-N) films with low density are potentially interesting as alternative low-dielectric-constant (low-κ) materials for future electronic devices. Such applications require deposition at temperatures below 300 °C, making plasma chemical vapor deposition (plasma CVD) a preferred deposition method. Plasma CVD of B-C-N films is today typically done with separate precursors for B, C and N or with precursors containing B–N bonds and an additional carbon precursor. We present an approach to plasma CVD of B-C-N films based on triethylboron (B(C2H5)3) a precursor with B-C bonds in an argon-nitrogen plasma. From quantitative analysis with Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA), we find that the deposition process can afford B-C-N films with a B/N ratio between 0.98 and 1.3 and B/C ratios between 3.4 and 8.6 and where the films contain between 3.6 and 7.8 at. % H and 6.6 and 20 at. % of O. The films have low density, from 0.32 to 1.6 g/cm3 as determined from cross-section scanning electron micrographs and ToF-ERDA with morphologies ranging from smooth films to separated nanowalls. Scaning transmission electron microscopy shows that C and BN does not phase seperarte in the film. The static dielectric constant κ, measured by capacitance–voltage measurements, varies with the Ar concentration in the range from 3.3 to 35 for low and high Ar concentrations, respectively. We suggest that this dependence is caused by the energetic bombardment of plasma species during film deposition. </div>

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“…This is supported by the high growth rate, high porosity and the presence of N-H bonds which are known to break above 300 1C. 70 This is also consistent with the observation of Merenkov et al 71 who reported formation of BN nanosheets from 400 1C and smooth films below 300 1C. STEM allowed us to obtain some complementary information to SEM by removing the Si substrate.…”

Section: Deposition Rate and Film Morphologysupporting

confidence: 83%