X-ray photoelectron spectroscopic study of KrF excimer laser nitrided InP surface

Abstract

Articles you may be interested inFabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces Appl. Phys. Lett. 96, 012107 (2010); 10.1063/1.3269906 X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism Stability of sulfur-treated InP surface studied by photoluminescence and x-ray photoelectron spectroscopy Nitridation of InP is performed by KrF excimer laser irradiation in an NH 3 ambient. The N-In and N-P bonds are formed in the irradiated area in proportion to the number of laser pulses. The x-ray photoelectron spectroscopy spectra of the nitrided samples contain a small concentration of oxide components after aging in an air atmosphere than nonirradiated samples

Impact of <i>In Situ</i> NH₃Plasma Treatments on the Interface between HfLaO_x<i></i> Thin Film and InP Substrate

“…2 (c) shows N1s XPS spectra of the nitride sample. Two peaks at 397.8 eV and 400.7 eV originated from N-O and N-H components [19] . The presence of the N-H signal is a result of insufficient decomposition of the NH 3 molecule at the sample surface.…”

Bandgap Engineering of Quantum Semiconductor Microstructures

“…In this example, the fabrication of a 3bandgap microstructure with E 0 , E 1 , and E 2 is obtained by Laser-RTA that follows UV laser irradiation of the QW microstructure with different number of pulses in Zone 1 and Zone 2. Additional bandgap shifting (tuning) could be achieved with the Iterative-Laser-RTA technique (Dubowski 2003) stoichiometric layers on InN and P 3 N 5 has been reported for InP surrounded by an NH 3 environment and irradiated with a KrF laser (Akane et al 2001). The role of the irradiation environment on the quality of the QWI material was extensively studied in literature (Liu et al 2012a(Liu et al , b, 2013.…”