X-ray diffractometry and topography of lattice plane curvature in thermally deformed Si wafer

Yi, Juyeon; Chu, Yong S.; Argunova, T. S.; Domagała, J. Z.; Je, Jung Ho

doi:10.1107/s0909049507045013

Cited by 5 publications

(3 citation statements)

References 18 publications

(17 reference statements)

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“…This finding, when correlated with results of independent studies by X-ray topography and transmission electron microscopy, allowed clarifying microscopic structure of dislocations involved in relaxation of strain associated with the thermal processing of Si wafers. In particular, fragmented dislocation structure was found while the local confinement of plastic deformation was attributed to the multiplication of the dislocations that are generated between the two slip bands [12].…”

Section: Thermally Strained Si Wafersmentioning

confidence: 99%

Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures

2008

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Spatially resolved X-ray diffraction is introduced and applied for microimaging of strain in GaAs and GaSb layers grown by epitaxial lateral overgrowth on GaAs substrates. We show that laterally overgrown parts of the layers (wings) are tilted towards the underlying mask. By spatially resolved X-ray diffraction mapping the direction of the tilt and distribution of tilt magnitude across the width of each layer can be readily determined. This allows measuring of the shape of the lattice planes in individual epitaxial stripes. In GaSb/GaAs heteroepitaxial laterally overgrown layers local mosaicity in the wing area was found. By spatially resolved X-ray diffraction the size of microblocks and their relative misorientation were analyzed. Finally, microscopic curvature of lattice planes confined between two neighboring slip bands in thermally strained Si wafers is measured. All these examples show advantages of spatially resolved X-ray diffraction over a standard X-ray diffraction when applied for analysis of crystalline microstructures.

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Section: Thermally Strained Si Wafersmentioning

confidence: 99%

Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures

2008

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“…Nevertheless, to quote from a recent paper on slip in 200 mm silicon wafers by Fischer et al (2009) 'Slip-free high temperature processing of silicon wafers at temperatures up to 1000 C still remains an engineering challenge', and it is apparent that the origin of slip remains of considerable industrial concern. The impact of slip-band formation on macroscopic wafer warpage is of particular interest (Yi et al, 2008).…”

Section: Introductionmentioning

confidence: 99%

Thermal slip sources at the extremity and bevel edge of silicon wafers

et al. 2011

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High‐resolution X‐ray diffraction imaging of 200 mm silicon wafers following rapid thermal annealing at a temperature of 1270 K has revealed the presence of many early stage sources of thermal slip associated with the wafer edge. Dislocation sources are primarily at the wafer extremity, though many are generated by damage at the edge of the bevel incline on the wafer surface. A smaller fraction of sources is associated with other regions of localized damage, probably relating to protrusions on the wafer support. The geometry of the latter is similar to that of dislocation sources generated by controlled indentation on the wafer surface. It is concluded that rapid spike annealing at high temperature does not suppress the nucleation of slip, but rather the rapidity of the process prevents the propagation of the dislocations in the slip band into the wafer.

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“…During thermal processing, any microscopic flaw at the surface may trigger drastic defect generation, and it remains difficult to avoid the plastic deformations caused by the nucleation and expansion of dislocations [1]. These can rapidly evolve into so-called slip bands [2,3], extending considerably into initially dislocation-free substrate areas and entailing large-scale warpage [4] and atomic steps at the surface [5]. With miniaturization reaching the 10 nm technology, such disturbances become increasingly problematic.…”

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confidence: 99%

Correlated Three-Dimensional Imaging of Dislocations: Insights into the Onset of Thermal Slip in Semiconductor Wafers

et al. 2017

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Correlated x-ray diffraction imaging and light microscopy provide a conclusive picture of three-dimensional dislocation arrangements on the micrometer scale. The characterization includes bulk crystallographic properties like Burgers vectors and determines links to structural features at the surface. Based on this approach, we study here the thermally induced slip-band formation at prior mechanical damage in Si wafers. Mobilization and multiplication of preexisting dislocations are identified as dominating mechanisms, and undisturbed long-range emission from regenerative sources is discovered.

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X-ray diffractometry and topography of lattice plane curvature in thermally deformed Si wafer

Cited by 5 publications

References 18 publications

Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures

Spatially Resolved X-ray Diffraction Technique for Crystallographic Quality Inspection of Semiconductor Microstructures

Thermal slip sources at the extremity and bevel edge of silicon wafers

Correlated Three-Dimensional Imaging of Dislocations: Insights into the Onset of Thermal Slip in Semiconductor Wafers

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