Correlated Three-Dimensional Imaging of Dislocations: Insights into the Onset of Thermal Slip in Semiconductor Wafers

Hänschke, Daniel; Danilewsky, A.N.; Helfen, Lukas; Hamann, Elias; Baumbach, Tilo

doi:10.1103/physrevlett.119.215504

Cited by 28 publications

(26 citation statements)

References 42 publications

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“…By direct comparison, e.g., by browsing the digitized XWBT data with virtual overlays of the simulation, now a reliable assessment of the experimental contrast strength is possible. More details about this enhanced BV determination are provided in Supplemental Material [21].…”

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confidence: 99%

“…Linking in this way the individual dislocations to their surface traces provides a localization at the surface with a few hundred nanometer precision (the resolution of optical microscopy), allows conclusions on the evolutionary history, and relates the internal crystalline defects with any structural features at the surface detectable by CDIC. A more detailed description of the data processing is given in Supplemental Material [21].…”

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confidence: 99%

“…(c) A 3D rendering based on the combined information from XDL and XWBT, for regions A and B also indicating the relation to the CDIC surface maps in Fig. 3(a) (see Supplemental Movie [21]). Tubes with a radius of 3 μm (estimated spatial resolution) represent the 3D dislocation paths, and a color code indicates the associated BV orientations determined.…”

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confidence: 99%

“…Several aspects of the distribution can be explained by means of finite element (FE) calculations of the thermal RSS on the 12 f111gh110i glide systems, τ th f111gh110i , the result shown in Fig. 2(b) (more details in Supplemental Material [21]). In particular, the rare appearance of b ∝ ½110 (purple) and b ∝ ½110 (pink) correlates with the low RSS predicted for the corresponding systems.…”

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confidence: 99%

“…1(a). For more details about the sample, see Supplemental Material [21], which provides also all relevant experimental parameters.…”

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confidence: 99%

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3D Imaging of Dislocations

Horton

2017

Physics

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Correlated x-ray diffraction imaging and light microscopy provide a conclusive picture of threedimensional dislocation arrangements on the micrometer scale. The characterization includes bulk crystallographic properties like Burgers vectors and determines links to structural features at the surface. Based on this approach, we study here the thermally induced slip-band formation at prior mechanical damage in Si wafers. Mobilization and multiplication of preexisting dislocations are identified as dominating mechanisms, and undisturbed long-range emission from regenerative sources is discovered.

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confidence: 99%

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confidence: 99%

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confidence: 99%

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confidence: 99%

“…1(a). For more details about the sample, see Supplemental Material [21], which provides also all relevant experimental parameters.…”

mentioning

confidence: 99%

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3D Imaging of Dislocations

Horton

2017

Physics

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X‐Ray Topography—More than Nice Pictures

Danilewsky

2020

Crystal Research and Technology

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X‐ray topography—a well‐known diffraction imaging method—is widely used for the characterization of extended crystal defects like dislocations. Herein, the progress toward the quantification besides the number and nature of dislocations is given. The diffracted images include additional information about tilt and strain, which can be measured in real‐time, thanks to the improved digital detection systems. This allows not only the fast mapping of huge samples like 450 mm diameter Si wafers, the in situ observation of the dislocation, or crack dynamics at high temperatures, but also the stress analysis in electronic devices in operando. In addition to typical white X‐ray beam methods like stacks of section topographs, the monochromatic diffraction laminography allows a 3D representation of the dislocation arrays. The merits and limitations of X‐ray topography are demonstrated by semiconductor materials as an example.

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Rapid defect characterization: The efficiency of diffraction contrast‐scanning transmission electron microscopy

Wang

Shi

et al. 2020

Microscopy Res & Technique

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Defect information is critical for both fundamental research and industrial analysis of metals and semiconductors. Diffraction contrast is the basis for defect imaging using either X-ray or electron microscopy. Taking the advantage of high resolution in electron microscopy techniques, here we evaluate the efficiency for diffraction contrast imaging based on scanning transmission electron microscopy. The working principle and application are demonstrated using the typical semiconductor material silicon as an example. The efficiency is improved at least an order of magnitude compared with conventional electron microscopy method.

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Correlated Three-Dimensional Imaging of Dislocations: Insights into the Onset of Thermal Slip in Semiconductor Wafers

Cited by 28 publications

References 42 publications

3D Imaging of Dislocations

3D Imaging of Dislocations

X‐Ray Topography—More than Nice Pictures

Rapid defect characterization: The efficiency of diffraction contrast‐scanning transmission electron microscopy

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