X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy Growth of III–V Semiconductors

Takahasi, Masamitu; Yoneda, Yasuhiro; Inoue, H.; Yamamoto, Naomasa; Мizuki, J.

doi:10.1143/jjap.41.6247

Cited by 64 publications

(41 citation statements)

References 7 publications

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“…Experiments were performed on the synchrotron radiation beamline 11XU at SPring-8, Japan, using a surface X-ray diffractometer which is directly coupled to an MBE apparatus [18]. The MBE chamber is equipped with X-ray windows made of beryllium along with five Knudsen cells and RHEED system so that the sample is subjected to X-ray measurements at the same position as prepared.…”

Section: Methodsmentioning

confidence: 99%

In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

Takahasi

Мizuki

2005

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

Takahasi

Мizuki

2005

Journal of Crystal Growth

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“…However, with the advent of synchrotron light sources, its usefulness for in situ monitoring during crystal growth has emerged. XRD oscillation similar to that of reflection highenergy electron diffraction (RHEED) during layer-by-layer growth has been observed not only in molecular-beam epitaxy (MBE) [30][31][32][33][34] but also in metalorganic chemical vapor deposition (MOCVD) [35][36][37] and in electrochemical deposition.…”

Section: Introductionmentioning

confidence: 86%

“…8. 32,86) This diffractometer employs what is called the "4S+2D" geometry, which is equipped with four axes (μ, η, χ, and ϕ) for rotating the sample and two axes (δ and ν) for positioning the detector. 111) For later convenience, the laboratory coordinate system is defined with the x-axis pointing vertically upwards and the y-axis antiparallel to the primary X-ray beam.…”

Section: X-ray Diffractometermentioning

confidence: 99%

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

Takahasi

2018

Jpn. J. Appl. Phys.

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The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III-V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid-solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

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“…GaSb(001) surfaces were prepared and measured at the BL11XU beamline on a SPring-8 synchrotron in Hyogo, Japan. 9 Prior to MBE growth, the native oxide was desorbed at 530°C under a Sb 4 flux of 0.15 ML/s. The sample was then cooled slowly while the Sb 4 overpressure on the surface was maintained.…”

Section: Methodsmentioning

confidence: 99%

GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction

Tinkham

Romanyuk

Braun

et al. 2008

Journal of Elec Materi

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Surface x-ray diffraction was employed, in situ, to measure the GaSb(001)-(1 9 5) and (1 9 3) surface phases under technologically relevant growth conditions. We measured a large set of fractional-order in-plane diffraction peaks arising from the superstructure of the surface reconstruction. From the data we calculated two-dimensional (2D) Patterson functions, the peaks of which represent inter-atomic distances weighted by the number of electrons in the individual atoms. For the (1 9 3) phase we obtained good agreement between our data and the b(4 9 3) model proposed in recent experimental and theoretical work. Our measurements on the Sb-rich (1 9 5) phase provide evidence that the structure under growth conditions is, in fact, different from that of the models previously suggested on the basis of scanning tunneling microscopy (STM). We discuss reasons for this discrepancy as well as the identified structural elements for these reconstructions, which include surface relaxations and subsurface rearrangement.

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X-Ray Diffractometer for Studies on Molecular-Beam-Epitaxy Growth of III–V Semiconductors

Cited by 64 publications

References 7 publications

In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

In situ X-ray diffraction study of molecular-beam epitaxial growth of InAs/GaAs(0 0 1) quantum dots

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

GaSb(001) Surface Reconstructions Measured at the Growth Front by Surface X-ray Diffraction

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