X-ray diffraction study of vertically aligned layers of h-BN, obtained by PECVD from borazine and ammonia or helium mixtures

Merenkov, I. S.; Kasatkin, Igor; Косинова, М. Л.

doi:10.1134/s0022476615060232

Cited by 8 publications

(7 citation statements)

References 9 publications

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“…Aligned initially in parallel to the silicon substrate, the h-BN nanosheets have later bent and started vertical growth. The similar structure of interface has been reported for BNNWs fabricated by physical vapor deposition [59] and PECVD [60]. The HRTEM images of the middle of nanowalls in Figs.…”

Section: Structural Featuressupporting

confidence: 80%

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

et al. 2018

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Dimensionality and orientation of hexagonal boron nitride (h-BN) nanosheets are promising to create and control their unique properties for diverse applications. However, low-temperature deposition of vertically oriented h-BN nanosheets is a significant challenge. Here we report on the low-temperature plasma synthesis of maze-like h-BN nanowalls (BNNWs) from a mixture of triethylamine borane (TEAB) and ammonia at temperatures as low as 400 °C. The maze-like BNNWs contained vertically aligned stacks of h-BN nanosheets. Wavy h-BN nanowalls with randomly oriented nanocrystalline structure are also fabricated. Simple and effective control of morphological type of BNNWs by the deposition temperature is demonstrated. Despite the lower synthesis temperature, thermal stability and oxidation resistivity of the maze-like BNNWs are higher than for the wavy nanowalls. The structure and oxidation of the nanowalls was found to be the critical factor for their thermal stability and controlled luminescence properties. Cytotoxic study demonstrated significant antibacterial effect of both maze-like and wavy h-BN nanowalls against E. coli. The reported results reveal a significant potential of h-BN nanowalls for a broad range of applications from electronics to biomedicine.

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Section: Structural Featuressupporting

confidence: 80%

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

et al. 2018

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“…The temperature evolution of h-BN film morphology deposited on GaAs(100) is similar to that on Si(100) substrate. The samples obtained at low temperatures also had a smooth surface and were amorphous (based on x-ray diffraction (XRD) data) [14]. When the synthesis temperature increased and BNNWs were obtained, the XRD pattern showed them having a nanocrystalline structure.…”

Section: Resultsmentioning

confidence: 99%

“…Amorphous BN was located between the crystallites. The BNNW/GaAs(100) substrate interface was atomically smooth and had no amorphous interfacial layer, which is characteristic for the deposition of h-BN nanowalls on the Si(100) substrate [12][13][14]. However, the first BN layers were deposited parallel-aligned to the GaAs substrate and after that the BNNWs started to grow.…”

Section: Resultsmentioning

confidence: 99%

“…These problems can be avoided by using organoboron precursor and plasma-enhanced process for fabrication of h-BN nanowalls. Previously we presented the results of deposition by the PECVD method from a mixture of borazine and ammonia at a temperature of below 700 °C on Si(100) substrate, and a structural investigation of BNNWs [13,14]. Despite the fact that borazine is considered to be an ideal precursor for boron nitride deposition due to the B/N ratio being equal, it was shown that for a plasma-enhanced process, a mixture of borazine and ammonia in the ratio of 1:1 was a prerequisite for obtaining BN stoichiometric composition [15].…”

Section: Introductionmentioning

confidence: 99%

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Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

2017

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Hexagonal boron nitride (h-BN) nanowalls (BNNWs) were synthesized by plasma-enhanced chemical vapor deposition (PECVD) from a borazine (BNH) and ammonia (NH) gas mixture at a low temperature range of 400 °C-600 °C on GaAs(100) substrates. The effect of the synthesis temperature on the structure and surface morphology of h-BN films was investigated. The length and thickness of the h-BN nanowalls were in the ranges of 50-200 nm and 15-30 nm, respectively. Transmission electron microscope images showed the obtained BNNWs were composed of layered non-equiaxed h-BN nanocrystallites 5-10 nm in size. The parallel-aligned h-BN layers as an interfacial layer were observed between the film and GaAs(100) substrate. BNNWs demonstrate strong blue light emission, high transparency (>90%) both in visible and infrared spectral regions and are promising for optical applications. The present results enable a convenient growth of BNNWs at low temperatures.

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“…A typical example is h-BN, which is a 2D insulator. The growth mechanism is still under investigation, but vertical h-BN flakes have been realized by PECVD already . Vertical 2D semiconductors, for example, MoS 2 is also synthesized, although with methods other than PECVD. , …”

Section: Discussionmentioning

confidence: 99%

Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

Sun

Rattanasawatesun

Tang

et al. 2022

ACS Appl. Mater. Interfaces

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Vertically oriented graphene (VG) has attracted attention for years, but the growth mechanism is still not fully revealed. The electric field may play a role, but the direct evidence and exactly what role it plays remains unclear. Here, we conduct a systematic study and find that in plasma-enhanced chemical vapor deposition, the VG growth preferably occurs at spots where the local field is stronger, for example, at GaN nanowire tips. On almost round-shaped nanoparticles, instead of being perpendicular to the substrate, the VG grows along the field direction, that is, perpendicular to the particles' local surfaces. Even more convincingly, the sheath field is screened to different degrees, and a direct correlation between the field strength and the VG growth is observed. Numerical calculation suggests that during the growth, the field helps accumulate charges on graphene, which eventually changes the cohesive graphene layers into separate three-dimensional VG flakes. Furthermore, the field helps attract charged precursors to places sticking out from the substrate and makes them even sharper and turn into VG. Finally, we demonstrate that the VG-covered nanoparticles are benign to human blood leukocytes and could be considered for drug delivery. Our research may serve as a starting point for further vertical two-dimensional material growth mechanism studies.

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X-ray diffraction study of vertically aligned layers of h-BN, obtained by PECVD from borazine and ammonia or helium mixtures

Cited by 8 publications

References 9 publications

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

Orientation-controlled, low-temperature plasma growth and applications of h-BN nanosheets

Boron nitride nanowalls: low-temperature plasma-enhanced chemical vapor deposition synthesis and optical properties

Insights into the Mechanism for Vertical Graphene Growth by Plasma-Enhanced Chemical Vapor Deposition

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