X-ray Diffraction Study of the Effect of Neutron Irradiation on the Defect Formation in Silicon Crystals Grown by the Czochralski Method and Annealed at High Temperatures

Макара, В. А.; Novikov, N. N.; Patsai, Bohdan

doi:10.1134/1.2087738

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2020

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“…However, magnetically stimulated processes are more ecient in the presence of the considerable amount of structural (linear in particular) defects in subsurface layers of semiconductors [36]. In addition, the eciency of such processes is aected by the magnetic eld exposure time [7,8] as well as by the precence of absorbed atoms or molecules that cause changes of the impurity composition of subsurface layers and the charge state of the surface [9,10].…”

Section: Introductionmentioning

confidence: 99%

Magnetically stimulated changes in the electrophysical properties of the near-surface silicon layer

Pavlyk¹,

Slobodzyan²,

Lys³

et al. 2020

J. Phys. Stud.

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This papers presents the results of the inuence of a weak magnetic eld (MF) (0.354 T) on the electrophysical properties of surface structures based on p-Si. A 300-hours exposure of singlecrystal silicon samples in a magnetic eld stimulates the decay of hydrogen-containing and oxygencontaining surface complexes (ÑHX , SiOH, ÎÍ) and the formation of SiH3 centers. As a result, the surface resistance increases and the barrier properties of the BiSi(p) contact deteriorate

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Section: Introductionmentioning

confidence: 99%