X-ray diffraction and photoelectron spectroscopy study of swift heavy ion irradiated Mn/p-Si structure

Srivastava, Mona; Shripathi, T.; Phase, D. M.; Srivastava, Pankaj

doi:10.1016/j.apsusc.2009.09.090

Cited by 5 publications

(6 citation statements)

References 20 publications

(23 reference statements)

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“…It has been used in earlier research works for introducing phase change in materials [13][14][15][16][17] and for preparation of thin films [18][19][20][21]. More recently, the DPF device is used for deposition of nanoparticles of different materials [3][4]. In the present work, we have deposited aluminium nanoparticles on n-Si (111) substrate using this device.…”

Section: Introductionmentioning

confidence: 99%

“…These techniques make use of ion beam which are less fluence and less energetic to deposit materials. Recently, strongly non equilibrium plasma of high density and high temperature has been used for nanofabrication [3][4][5][6]. We have made use of Dense Plasma Focus (DPF) device [11][12] ) and high temperature (~1-2 keV) plasma which fully ionizes the material placed on the top of the modified anode.…”

Section: Introductionmentioning

confidence: 99%

“…So, metallic contacts of atomic dimensions have been a subject of interest in recent times. Plasma aided nanofabrication [3][4][5][6] has been considered widely for material deposition. Many techniques such as ionized cluster beam (ICB), partially ionized beam (PIB) [7], electron beam evaporation [8], magnetron sputtering [9], pulsed microarc discharge [10] techniques have been employed to deposit aluminium on different substrates.…”

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confidence: 99%

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Deposition of aluminium nanoparticles using dense plasma focus device

Devi¹,

Roy²,

Srivastava³

2010

J. Phys.: Conf. Ser.

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Abstract. Plasma route to nanofabrication has drawn much attention recently. The dense plasma focus (DPF) device is used for depositing aluminium nanoparticles on n-type Si (111) wafer. The plasma chamber is filled with argon gas and evacuated at a pressure of 80 Pa. The substrate is placed at distances 4.0 cm, 5.0 cm and 6.0 cm from the top of the central anode. The aluminium is deposited on Si wafer at room temperature with two focused DPF shots. The deposits on the substrate are examined for their morphological properties using atomic force microscopy (AFM). The AFM images have shown the formation of aluminium nanoparticles. From the AFM images, it is found that the size of aluminium nanoparticles increases with increase in distance between the top of anode and the substrate for same number of DPF shots. IntroductionAluminium is an important material for making contacts in silicon technology for its ability to make both ohmic and Schottky contacts [1]. It is possible to make ohmic contact by making the metal contacts to p-type regions and heavily doped n-type silicon regions and rectifying contact to lightly doped n-type silicon regions. The need for low temperature processing and low resistive material in IC technology has made this simple metal contacts widely used in large scale integration (LSI) and also in early stage of the very large scale integration (VLSI) in recent times. Nanostructures like aluminium silicon nanowire networks have also been fabricated on glass and Si substrates by dealloying an Al-Si thin film through selective chemical etching [2] in order to miniaturize and make power efficient devices. Nanowire can act as electron confinement structure. When it is coupled with appropriate self configuring computer control architecture it would enable realization of self assembled ultrahigh density electronic device. So, metallic contacts of atomic dimensions have been a subject of interest in recent times. Plasma aided nanofabrication [3][4][5][6] has been considered widely for material deposition. Many techniques such as ionized cluster beam (ICB), partially ionized beam (PIB) [7], electron beam evaporation [8], magnetron sputtering [9], pulsed microarc discharge [10] techniques have been employed to deposit aluminium on different substrates. ICB technique has a limitation that the requirement of using a small nozzle of the order of 1-2 mm for supersonic

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Deposition of aluminium nanoparticles using dense plasma focus device

Devi¹,

Roy²,

Srivastava³

2010

J. Phys.: Conf. Ser.

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“…Recently, wideband semiconductors have attracted great interest, because of their future possible applications in many areas, such as UV sensors, lightemitting diodes (LED's), laser diodes (LD's), and other highspeed highpower electronic devices. Zinc Oxide is a IIVI class semiconductor material that has been used in various areas, including phosphor, piezoelectric transducers, surface acoustic wave devices, gas sensors and varistors [12]. Zinc oxide with ptype conduction has recently attracted many researchers due to its potential applications in performing transparent pZnO/ nZnO homojunctions LED's.…”

Section: Introductionmentioning

confidence: 99%

“…These ions along with the nitrogen ions move upwards in a fountain like structure and condense on the nSi (111) and pSi (100) substrates which are placed at a distance of 5 cm above the anode. DPF device as has been earlier established [11,12] for the preparation of nanoparticles have been used in the present study. DPF device used is 3.3 KJ Mather type device powered by 30 µF, 15 KV fast discharging energy storage Maxwell capacitor.…”

Section: Introductionmentioning

confidence: 99%