Deposition and surface characterization of nanoparticles of zinc oxide using dense plasma focus device in nitrogen atmosphere

Malhotra, Yashi; Roy, Savita; Srivastava, M. P.

doi:10.1088/1742-6596/208/1/012106

Cited by 3 publications

(3 citation statements)

References 19 publications

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“…The modified DPF device with suitable modification has been used worldwide for the fabrication of nanoparticles and nanostructures of different materials [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In most of these studies, the modification of anode is almost similar but the arrangement for placing the substrate varies.…”

Section: Introductionmentioning

confidence: 99%

“…The modified DPF device has been established as a promising tool for nanofabrication by the plasma research group at the University of Delhi [ 7 , 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 ]. In particular, several nanostructures of metals [ 8 , 9 , 10 , 11 , 12 , 13 ], semiconductors [ 14 , 15 , 16 , 17 , 18 ] and insulators [ 19 , 20 , 21 ] have been produced using the modified DPF device. Apart from this the nanostructures of materials, such as TiC [ 3 ], hydroxyapatite (HA) [ 4 ], Al/a-C [ 5 ], WN 2 [ 6 ], etc.…”

Section: Introductionmentioning

confidence: 99%

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Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

2015

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The hot and dense plasma formed in modified dense plasma focus (DPF) device has been used worldwide for the nanofabrication of several materials. In this paper, we summarize the fabrication of III–V semiconductor nanostructures using the high fluence material ions produced by hot, dense and extremely non-equilibrium plasma generated in a modified DPF device. In addition, we present the recent results on the fabrication of porous nano-gallium arsenide (GaAs). The details of morphological, structural and optical properties of the fabricated nano-GaAs are provided. The effect of rapid thermal annealing on the above properties of porous nano-GaAs is studied. The study reveals that it is possible to tailor the size of pores with annealing temperature. The optical properties of these porous nano-GaAs also confirm the possibility to tailor the pore sizes upon annealing. Possible applications of the fabricated and subsequently annealed porous nano-GaAs in transmission-type photo-cathodes and visible optoelectronic devices are discussed. These results suggest that the modified DPF is an effective tool for nanofabrication of continuous and porous III–V semiconductor nanomaterials. Further opportunities for using the modified DPF device for the fabrication of novel nanostructures are discussed as well.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

2015

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“…Hassan et al synthesized the titanium nitride coating on a titanium substrate (9), other groups have reported modification of 316L stainless steel by irradiation with nitrogen ion beams (10), and deposition of nanoparticles and nanostructured cobalt (4). Malhotra et al reported the formation of zinc oxide nanoparticles using a 4 kJ PF device (11).…”

Section: Introductionmentioning

confidence: 99%

The effect of TiN nanoparticles deposition with different number of shots on SS316L by plasma focus device

Omrani¹,

Amrollahi²,

Habibi³

2013

Radiation Effects and Defects in Solids

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In this paper, we present the result of TiN nanocrystalline deposition on SS316L, using a 4 kJ plasma focus (PF) device for 10, 20, and 30 focus shots. The effect of different number of focus shots on micro-structural changes of thin film is characterized by field emission scanning electron microscope. Existence of grains in different size confirms the formation of TiN nanocrystals on the surface of SS316L substrate. X-ray diffraction (XRD) reveals the formation of a nanocrystalline titanium nitride coating on the surface of SS316L samples. The crystalline size of TiN obtained from XRD data is strongly dependent on the number of focus shots. Thickness of the elements found on the surface of the treated sample that obtain by Rutherford backscattering spectroscopy (RBS) analysis is in the range of 150 × 10 15 − 200 × 10 15 atoms/cm 2 . All the existence elements in the coated samples are identified by Particle Induced X-ray Emission (PIXE) spectra. Investigation on the corrosion resistance of TiN coatings was performed using an electrochemical potentiodynamic polarization. Our results suggest that TiN nanocrystalline implantation with proper ion fluences using PF can significantly improve the corrosion resistance of SS316L.

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Research with plasma foci in countries of Asia, Africa, and Latin America

Дубинов

Fomicheva

Senilov

2020

Rev. Mod. Plasma Phys.

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Deposition and surface characterization of nanoparticles of zinc oxide using dense plasma focus device in nitrogen atmosphere

Cited by 3 publications

References 19 publications

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

Dense Plasma Focus-Based Nanofabrication of III–V Semiconductors: Unique Features and Recent Advances

The effect of TiN nanoparticles deposition with different number of shots on SS316L by plasma focus device

Research with plasma foci in countries of Asia, Africa, and Latin America

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