Advanced Characterization Techniques for Thin Film Solar Cells 2011
DOI: 10.1002/9783527636280.ch13
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X‐Ray and Neutron Diffraction on Materials for Thin‐Film Solar Cells

Abstract: In order to understand natural and artificially produced materials, a detailed understanding of their crystal structures is required. This information is a basis for research in physics, chemistry, biology, and materials science. Among the various experimental methods, neutron and X-ray (photon) scattering have become key techniques of choice. Both techniques are complementary. In X-ray scattering, it is almost exclusively the electrons in atoms which contribute to the scattering, whereas neutrons interact wit… Show more

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Cited by 8 publications
(3 citation statements)
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“…[ 46 ] X‐ray diffraction (XRD)‐based characterization techniques, including conventional laboratory‐based XRD and synchrotron‐based grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) (Figure 2c), are widely used to provide information on a material's crystallographic structure, phases, preferred crystal orientations, chemical composition, and other physical properties related to the crystallinity of the material. [ 47 ] Performing XRD experiments, such as GIWAXS, in a synchrotron facility can provide additional microstructural information, such as depth‐dependent and quantitative film texture information, and in situ experiments can allow for a real‐time assessment of the evolution of the microstructure during processing. [ 42,47 ] Scanning electron microscopy (SEM) and atomic force microscopy (AFM) are real‐space imaging techniques that are commonly utilized to characterize thin‐film morphology, such as surface coverage, grain size, and surface roughness.…”
Section: Perovskite Interface Properties and Characterizationsmentioning
confidence: 99%
See 1 more Smart Citation
“…[ 46 ] X‐ray diffraction (XRD)‐based characterization techniques, including conventional laboratory‐based XRD and synchrotron‐based grazing‐incidence wide‐angle X‐ray scattering (GIWAXS) (Figure 2c), are widely used to provide information on a material's crystallographic structure, phases, preferred crystal orientations, chemical composition, and other physical properties related to the crystallinity of the material. [ 47 ] Performing XRD experiments, such as GIWAXS, in a synchrotron facility can provide additional microstructural information, such as depth‐dependent and quantitative film texture information, and in situ experiments can allow for a real‐time assessment of the evolution of the microstructure during processing. [ 42,47 ] Scanning electron microscopy (SEM) and atomic force microscopy (AFM) are real‐space imaging techniques that are commonly utilized to characterize thin‐film morphology, such as surface coverage, grain size, and surface roughness.…”
Section: Perovskite Interface Properties and Characterizationsmentioning
confidence: 99%
“…[ 47 ] Performing XRD experiments, such as GIWAXS, in a synchrotron facility can provide additional microstructural information, such as depth‐dependent and quantitative film texture information, and in situ experiments can allow for a real‐time assessment of the evolution of the microstructure during processing. [ 42,47 ] Scanning electron microscopy (SEM) and atomic force microscopy (AFM) are real‐space imaging techniques that are commonly utilized to characterize thin‐film morphology, such as surface coverage, grain size, and surface roughness. [ 48 ] Additional microstructural information can also be obtained through SEM characterizations, such as phase separation and distribution by detecting characteristic X‐rays or backscattered electrons.…”
Section: Perovskite Interface Properties and Characterizationsmentioning
confidence: 99%
“…9 The resulting cation site occupation factors (SOF) were used to further apply the method of average neutron scattering length. 7,10,11 This method was previously adopted to identify the type and concentration of point defects in offstoichiometric CuInSe 2 . 7 The average neutron scattering lengths b exp 4b values (except for x ¼ 0.82) are found to be within the value for b Ga .…”
mentioning
confidence: 99%