X-ray analysis for micro-structure of AlN/GaN multiple quantum well systems

Liubchenko, O. I.; Kladko, V. P.; Sabov, T.; Dubikovskyi, Oleksandr

doi:10.1007/s10854-018-0315-3

Cited by 4 publications

(4 citation statements)

References 56 publications

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“…However, for simplicity it was assumed that the diffuse scattering was caused solely by point defects. Moreover, the dislocations broadening of (0002) 2θ/ω scans is small in comparison with high-order reflections [29]. This also explains the weaker change of the microdefect state of the sample S2 in comparison with the sample S1.…”

Section: Resultsmentioning

confidence: 91%

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The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Liubchenko¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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Compositionally graded Al x Ga 1-x N alloys with the Al concentration in the (7 ≤ x ≤ 32) range were implanted with Ar + ions to study the structural and strain changes (strain engineering). It was shown that ion implantation leads to ~0.3…0.46% hydrostatic strains and a relatively low damage of the crystal structure. The ion-implantation leads mainly to an increase of the density of point defects, while the dislocation configuration is almost unaffected. The density of microdefects is sufficiently reduced after the postimplantation annealing. The structural quality of the Al x Ga 1-x N layers strongly depends on the Al concentration and is worsen with increasing Al. The implantation induced structural changes in highly dislocated Al x Ga 1-x N layers are generally less pronounced. Based on the X-ray diffraction, a model is developed to explain the strain field behavior in the Al x Ga 1-x N/GaN heterostructures by migration of point defects and strain field redistribution. The approach to simulate 2θ/ω scans using statistical dynamical theory of X-ray diffraction for implanted compositionally graded structures AlGaN has been developed.

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Section: Resultsmentioning

confidence: 91%

“…The error between the experimental and calculated 2θ/ω scans was determined as in Refs. [29,30]. For the samples under investigation, the fitting is additionally complicated by the low intensity of the fringes from the Al x Ga 1-x N layer and the relatively high intensity from the peak at the lower angles from the GaN substrate.…”

Section: Resultsmentioning

confidence: 99%

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

Liubchenko¹

2019

Semicond. Phys. Quantum Electron. and Optoelectron.

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“…During the growth process of a crystal, unwanted defects, dislocations, and strain may have occurred. The dislocations in a crystal and other structural parameters such as the thickness, the alloy mole fraction, the lattice parameters can be calculated by X‐ray diffraction (XRD) results, which is nondestructive method 5,15–18 . To investigate the dislocation densities that include edge and screw types in terms of the structural quality is important, because the dislocations are one of the main effects that deteriorate the device performance of the HEMTs 19–21 .…”

Section: Introductionmentioning

confidence: 99%

“…The dislocations in a crystal and other structural parameters such as the thickness, the alloy mole fraction, the lattice parameters can be calculated by X-ray diffraction (XRD) results, which is nondestructive method. 5,[15][16][17][18] To investigate the dislocation densities that include edge and screw types in terms of the structural quality is important, because the dislocations are one of the main effects that deteriorate the device performance of the HEMTs. [19][20][21] One of the main reasons for the dislocations is the strain relaxation that occurred at the interfaces.…”

Section: Introductionmentioning

confidence: 99%

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Narin

Kutlu-Narin

Atmaca

et al. 2022

Surface & Interface Analysis

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Metal-organic chemical vapor deposition (MOCVD) is one of the best growth methods for GaN-based materials as well-known. GaN-based materials with very quality are grown the MOCVD, so we used this growth technique to grow InAlN/ GaN and AlN/GaN heterostructures in this study. The structural and surface properties of ultrathin barrier AlN/GaN and InAlN/GaN heterostructures are studied by X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements. Screw, edge, and total dislocation densities for the grown samples have been calculated by using XRD results. The lowest dislocation density is found to be 1.69 Â 10 8 cm À2 for Sample B with a lattice-matched In 0.17 Al 0.83 N barrier. The crystal quality of the studied samples is determined using (002) symmetric and (102) asymmetric diffractions of the GaN material. In terms of the surface roughness, although reference sample has a lower value as 0.27 nm of root mean square values (RMS), Sample A with 4-nm AlN barrier layer exhibits the highest rough surface as 1.52 nm of RMS. The structural quality of the studied samples is significantly affected by the barrier layer thickness.The obtained structural properties of the samples are very important for potential applications like high-electron mobility transistors (HEMTs).

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Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices

et al. 2019

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X-ray analysis for micro-structure of AlN/GaN multiple quantum well systems

Cited by 4 publications

References 56 publications

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

The effect of ion implantation on structural damage of сompositionally graded AlGaN layers

A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics

Modification of elastic deformations and analysis of structural and optical changes in Ar+-implanted AlN/GaN superlattices

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