X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

Erlacher, A.; Ambrico, M.; Capozzi, V.; Augelli, V.; Jaeger, Herbert; Ullrich, Bruno

doi:10.1088/0268-1242/19/11/019

Cited by 20 publications

(11 citation statements)

References 18 publications

(19 reference statements)

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“…1. Apparently, these crystallites contribute an essential part to the photocurrent of the films since a crystalline density of states did fit the spectra very well [10]. It is interesting to note that the majority height of the crystallites (%1 lm) clearly exceeds the average film thickness.…”

Section: Letter To the Editormentioning

confidence: 89%

“…About two years ago, we successfully launched the formation of thin-film GaAs with PLD and reported first indications that crystalline GaAs films on glass might be possible [9]. Meanwhile, we demonstrated that the photocurrent of PLD GaAs follows the crystalline density of states [10]. Furthermore, we achieved low-power all-optical laser digitizing with the potential to operate in the THz regime with PLD GaAs on glass [11,12].…”

mentioning

confidence: 99%

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Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Erlacher

Комарова

Jaeger

et al. 2006

Journal of Non-Crystalline Solids

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Section: Letter To the Editormentioning

confidence: 89%

mentioning

confidence: 99%

Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Erlacher

Комарова

Jaeger

et al. 2006

Journal of Non-Crystalline Solids

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“…The aim of these nanostructure preparation alternatives is to obtain good structural quality III-V semiconductors compatible with traditional semiconductor technology [13][14][15][16]. The success of these efforts will translate in the production of low-cost optical devices, compared with some widely used epitaxial techniques, such as molecular-beam epitaxy (MBE) [17][18][19][20][21][22][23].…”

Section: Centro De Investigación Ymentioning

confidence: 99%

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

et al. 2019

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Currently, the obtention of nano-structures based on III-V materials is expensive. This calls for novel and inexpensive nanostructure manufacturing approaches. In this work we report on the manufacture of a nanostructures consisting of alternating layers of In and GaAs on a silicon substrate by magnetron sputtering. Furthermore, we characterized the produced nanostructures using secondary ion mass spectroscopy (SIMS), X-ray diffraction analysis, and Raman spectroscopy. SIMS revealed variation in the concentration of In atoms across In/GaAs/In interphases, and X-ray diffraction revealed planes corresponding to phases associated with GaAs and InAs due to In interfacial diffusion across GaAs layers. Finally, in order to study the composition and crystalquality of the manufactured nanostaructures, Raman spectra were taken using laser excitation lines of 452 nm, 532 nm, and 562 nm at different points across the nanostructures.This allowed to determine the transverse and longitudinal optical modes of GaAs and InAs,characteristic of a two-mode behavior. An acoustic longitudinal vibrational mode LA(Γ) of GaAs and an acoustic longitudinal mode activated by disorder (DALA) were observed. These resulted from the substitution of Ga atoms for In atoms in high concentrations due to the generation of Ga(VGa) and/or Arsenic(VAs) vacancies.This set of analyses show that magnetron sputtering can be aviable and relatively low-cost technique to obtain this type of semiconductors.

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“…This measurement provides an idea about the electronic properties (optical bandgap) of the material as well as its intrinsic transport features. The photocurrent equation is given by 21 …”

Section: Introductionmentioning

confidence: 99%

Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures

Rezgui

Gourbilleau

Maestre

et al. 2012

Journal of Applied Physics

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Structural and optoelectronical characterization of Si -SiO 2 / SiO 2 multilayers with applications in all Si tandem solar cells J. Appl. Phys. 107, 064321 (2010) Experimental investigation of photoconductivity in Si-rich silicon oxide (SRSO)/SiO 2 multilayer (ML) structures prepared by magnetron reactive sputtering is reported. Photocurrent (PC) measurements show that the PC threshold increases with decreasing the thickness of SRSO layer. Photo-conduction processes in our samples are shown to be dominated by carrier transport through quantum-confined silicon nanocrystals embedded in the SiO 2 host. In addition, the observed bias-dependence of photocurrent intensity is consistent with a model in which carrier transport occurs by both tunneling and hopping through defect states in the silicon oxide matrix. A photocurrent density J ph of 1-2 mA cm À2 is extracted from our results. Although this photocurrent density along the ML absorber film is relatively low, the results presented in this work are believed to be a valuable contribution toward the implementation of all-Si tandem solar cells. V C 2012 American Institute of Physics. [http://dx

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X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

Cited by 20 publications

References 18 publications

Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition

Structural and optical study of alternating layers of In and GaAs prepared by magnetron sputtering

Charge photo-carrier transport from silicon nanocrystals embedded in SiO2-based multilayer structures

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