X-band SiGe power HBT's

Strong, R.; Agarwal, Anant; Smith, T.; Messham, R.L.; Mani, S. S.; Hegde, Vinayakprasanna N.; Hanes, M.H.; Nathanson, H.C.; Potyraj, Paul; Petrosky, K.J.; Knight, Thomas J.; Brabant, Paul

doi:10.1109/smic.1998.750194

Cited by 4 publications

(2 citation statements)

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“…Efforts on the microwave power application of SiGe-based HBTs have thus far been limited to - [4]- [8], - [9], [10] , and -band [11] operations. The demand for higher channel capacity in wireless communication will naturally drive the wireless operation frequency to -band and the reported performance characteristics of SiGe HBTs [12], [13] operating in this band are rather limited. A drawback in the development of -band power SiGe HBTs, arising from the 6-dB/octave power gain reduction for small-signal operation and additional gain compression for large-signal 0018-9480/02$17.00 © 2002 IEEE operation, is that high output power can only be obtained at the cost of low power gain [12] and vice versa [13].…”

mentioning

confidence: 99%

“…The demand for higher channel capacity in wireless communication will naturally drive the wireless operation frequency to -band and the reported performance characteristics of SiGe HBTs [12], [13] operating in this band are rather limited. A drawback in the development of -band power SiGe HBTs, arising from the 6-dB/octave power gain reduction for small-signal operation and additional gain compression for large-signal 0018-9480/02$17.00 © 2002 IEEE operation, is that high output power can only be obtained at the cost of low power gain [12] and vice versa [13]. Nevertheless, a high output power with a concurrent high power gain (hence, power-added efficiency (PAE) at a certain class of operation) is always required for the implementation of efficient power amplifiers.…”

mentioning

confidence: 99%

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A high-power and high-gain X-band Si/SiGe/Si heterojunction bipolar transistor

Mohammadi

Bhattacharya

et al. 2002

IEEE Trans. Microwave Theory Techn.

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A double mesa-type Si/SiGe/Si (n-p-n) heterojunction bipolar transistor (HBT) with record output power and power gain at-band (8.4 GHz) is demonstrated. The device exhibits collector breakdown voltage BV CBO of more than 24 V and a maximum oscillation frequency max of 37 GHz. Under continuous-wave operation and class-AB biasing conditions, 24.2-dBm (263-mW) RF output power with concurrent gain of 6.9 dB is measured at the peak power-added efficiency (28.1%) from a single ten-emitter fingers (780-m 2 emitter area) common-base HBT. The maximum RF output power achieved is as high as 26.3 dBm (430 mW in saturation) and the maximum collector efficiency is 36.9%. The low collector doping concentration together with the device layout result in negligible thermal effects across the transistor and greatly simplifies the large-signal modeling. The conventional Gummel-Poon model yields good agreement between the modeled and the measured dc characteristics and small-signal-parameters. The accuracy of the model is further validated with the measured power performance of the SiGe power HBT at-band. These results set a benchmark for power performance for SiGe-based HBTs and indicate promise for their implementation in efficient-band poweramplifier circuits.

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