X-Band Multi-Frequency 30% Compound SCALN Microacustic Resonators and Filters for 5G-Advanced and 6G Applications

Giribaldi, Gabriel; Pirro, Michele; Assylbekova, Meruyert; Herrera, Bernard; Michetti, Giuseppe; Colombo, Luca; Rinaldi, Matteo

doi:10.1109/eftf/ifcs54560.2022.9850563

Cited by 9 publications

(15 citation statements)

References 9 publications

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“…center frequency (fc), IL, Out-of-Band Rejection (OBR), BW 3dB and fractional BW (FBW), are reported in Table 2. In the same table, also the filters from [38], only other acoustic X-band filters that are lithographically frequency-tunable, are shown. This in order to provide quantitative information on how the devices' main metrics are deeply influenced by an improved film's crystallinity and micro-machining process, and highlighting once more the novelty of the current results.…”

Section: Resultsmentioning

confidence: 99%

“…The reported IL is the minimum in the band, the OBR is computed 1 BW away from the center frequency, and the reported matching impedance is the average of the two ports' one. In the same table, also the filters from [38] are reported.…”

Section: Methodsmentioning

confidence: 99%

“…In recent years, doping of AlN with Scandium atoms has been demonstrated to provide a substantial piezoelectric coefficient enhancement [34] [35]. This allows to reach unprecedented k 2 t values for resonators employing sputtered piezoelectric thin-films [36][37] [38][39], and lightly-doped (LD) ScAlN devices have been already commercialized. Because of the non-linear change of the material properties with the dopant concentration, the maximum electromechanical coupling enhancement is achieved for high doping levels.…”

Section: Introductionmentioning

confidence: 99%

“…Highly-doped (HD) ScAlN (Sc[%]>30%) is therefore a promising material for LFE CLMRs, allowing to combine the advantage of simple fabrication and on-chip lithographic tunability of the resonance frequency with k 2 t values higher than AlN FBARs. In [38], preliminary results in terms of X-band devices have been demonstrated. However, due to the lower film's crystallinity, combined with a higher density of AOGs, and a sub-optimal design, their performance is far from being compatible with the specs of commercial devices, both of resonators and filters.…”

Section: Introductionmentioning

confidence: 99%

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Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi

Colombo

Simeoni

et al. 2023

Preprint

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The last half a century has seen an enormous growth in mobile communication, reflecting into an increasingly interconnected world. Nevertheless, the incessant demand for faster data-rates requires a shift to higher carrier frequencies, which translates to the need for more ubiquitous hardware due to the increased wave propagation losses. The 7-20 GHz range, located between the sub-6 GHz (5G FR-1) and the mm-wave (5G FR-2) spectrum, provides an excellent trade-off between network capacity and coverage. Such spectrum portion constitutes a yet-to-explore third frequency range (FR-3) for future 5G applications, and is foreseen to become the 6G mid-band, devoted to crowded urban area coverage. This work proposes a technological platform able to deliver CMOS-compatible, on-chip multi-frequency low-loss, wideband, and compact passband filters for cellular radios operating at mid-band frequencies, exploiting the micro-to-nano scaling of acoustic electromechanical resonators and filters. The presented results showcase the first-ever demonstrated low insertion loss bank of 7 nanoacoustic passive passband filters in the X-band, spanning more than 3 GHz of operation, all fabricated on the same substrate with state-of-the-art and low-complexity micro-machining process. Most of the filters showcase fractional bandwidths above 3% and sub-dB loss per stage, all in an extremely compact form factor, enabling the manufacturing of X-band filters and duplexers that can be integrated in mobile handsets at each antenna element. The novelty of the current results stems from the adoption of a high-crystallinity piezoelectric Sc-doped AlN thin film, together with an optimized resonator topology in terms of design and fabrication.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi

Colombo

Simeoni

et al. 2023

Preprint

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“…These devices could be matched to 50 , but suffered from relatively large losses and the demonstrated quality factors (Q s ) were below 200, making them far less competitive with respect to alternative electromagnetic-based filtering technologies in terms of resulting filter losses and roll-off. Works by the MEMS community [112], [113], [114], [115], [116], [117] have confirmed that the same AlN films or doped films can operate at these frequencies and in topologies, which support either higher quality factors (Q ≈ 500) or large coupling (k 2 ≈ 10%). The integration of resonators in advanced CMOS processes [118] has facilitated the insertion of innovative phononic crystal designs into electrostrictive acoustic resonators, which have exhibited exceptionally high-Q in excess of 10,000 at mm-wave frequencies.…”

Section: A Overview Of Mm-wave Acoustic Resonatorsmentioning

confidence: 92%

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

et al. 2023

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This paper reviews the latest developments in microwave acoustic wave devices. After an introduction and brief history of bulk acoustic wave (BAW) and surface acoustic wave (SAW) devices, a review is given for guided SAWs and XBARs -two new technologies, which are promising for future 5G applications. Following this, we discuss recent simulation techniques, such as 3D finite element method (3D FEM) and simulation of nonlinearities, as well as filter synthesis. Next, a review on tunable and reconfigurable acoustics is given. Finally, we present the latest developments in microwave acoustics for millimeter-wave (mm-wave) operation as well as BAW oscillators.INDEX TERMS Bulk acoustic wave (BAW) devices, filter, filter-synthesis, front-end, high power, MTT 70th Anniversary Special Issue, multiplexer, nonlinearity, resonator, surface acoustic wave (SAW) devices.

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Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Giribaldi,

Colombo,

Simeoni

et al. 2024

Nat Commun

Self Cite

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Over recent years, the surge in mobile communication has deepened global connectivity. With escalating demands for faster data rates, the push for higher carrier frequencies intensifies. The 7–20 GHz range, located between the 5G sub-6 GHz and the mm-wave spectra, provides an excellent trade-off between network capacity and coverage, and constitutes a yet-to-be-explored range for 5G and 6G applications. This work proposes a technological platform able to deliver CMOS-compatible, on-chip multi-frequency, low-loss, wide-band, and compact filters for cellular radios operating in this range by leveraging the micro-to-nano scaling of acoustic electromechanical resonators. The results showcase the first-ever demonstrated low insertion loss bank of 7 nanoacoustic passband filters in the X-band. Most of the filters showcase fractional bandwidths above 3% and sub-dB loss per stage in an extremely compact form factor, enabling the manufacturing of filters and duplexers for the next generation of mobile handsets operating in the X-band and beyond.

show abstract

X-Band Multi-Frequency 30% Compound SCALN Microacustic Resonators and Filters for 5G-Advanced and 6G Applications

Cited by 9 publications

References 9 publications

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

From Microwave Acoustic Filters to Millimeter-Wave Operation and New Applications

Compact and wideband nanoacoustic pass-band filters for future 5G and 6G cellular radios

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