1983 International Electron Devices Meeting 1983 Help me understand this report
X and Ku-band high power GaAs FETs
Search citation statements
Paper Sections
Select...
1
Citation Types
0
1
0
Year Published
1987
1987
Publication Types
Select...
1
Relationship
0
1
Authors
Journals
Cited by 1 publication
(1 citation statement)
References 7 publications
0
1
0
“…The unit gate width is also determined by the operating frequency. The gain degradation due to the unit gate width has been studied by Fujitsu [5]. The unit gate width is optimized to be 125Am…”
Section: Fet Ciiip Desighn and Fabricationmentioning
confidence: 99%
“…The unit gate width is also determined by the operating frequency. The gain degradation due to the unit gate width has been studied by Fujitsu [5]. The unit gate width is optimized to be 125Am…”
Section: Fet Ciiip Desighn and Fabricationmentioning
confidence: 99%
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
