Progress in Microwave High-Power Devices

Abstract

ABSTRUCT This paper describes the recent progress of the microwave highpower devices in Japan, especially forcussing on GaAs power FETs. The fabrication process of power GaAs FET chips, and the internally matched power FETs covering from Cto Ka-band are described. New compound semiconductor devices such as InP MISFETs and HEMTs are also forcussed.