Wurtzite to Zinc Blende Phase Transition in GaAs Nanowires Induced by Epitaxial Burying

Patriarche, G.; Glas, Frank; Tchernycheva, Maria; Sartel, Corinne; Largeau, L.; Harmand, J. C.; Cirlin, G. É.

doi:10.1021/nl080319y

Cited by 65 publications

(58 citation statements)

References 31 publications

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“…GaAs grows only on the substrate surface, adopting its zinc blende bulk structure and embedding progressively the NWs. We have shown that this process transforms the initial wurtzite crystal phase of the NWs in the zinc blende phase adopted by the burying layer [14]. The phase transformation is very favorable in that it eliminates the stacking faults pre-existing in the NWs.…”

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confidence: 88%

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Lucot

Jabeen

Harmand

et al. 2011

Applied Physics Letters

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We present an original approach to fabricate single GaAs/AlGaAs core-shell nanowire with robust and reproducible transport properties. The core-shell structure is buried in an insulating GaAs overlayer and connected as grown in a two probe set-up using the highly doped growth substrate and a top diffused contact. The measured conductance shows a non-ohmic behavior with temperature and voltage-bias dependences following power laws, as expected for a quasi-1D system.Semiconductor nanowires (NWs) are promising candidates for the realization of innovative nano-devices for electronics as well as for photonics [1]. They also represent a new test bed system in semiconductor material science to explore the fundamental properties of 1D systems [2]. Usual fabrication of such nano-objects by lithography and etching techniques is limited by surface damage and roughness which, at very small sizes, have a dominant effect on their physical properties. In contrast, the metal particle-mediated vapor-liquid-solid (VLS) growth mechanism allows to obtain NWs of high crystalline quality with uniform nanometer-scale diameters. Moreover, this bottom-up approach gives the possibility to achieve heterostructure material combinations that are not possible in bulk semiconductors [3]. In particular core-shell heterostructures formed by the growth of crystalline overlayers around the initial NW reduces surface states which can act as scattering or recombination centers [4].The GaAs/AlGaAs material system, which presents very large band offsets and small lattice mismatches, has been studied and used extensively to fabricate heterostructures with complex band engineering along the growth direction of the crystal [5].The modulation-doping concept [6] was first implemented in this system and high electron mobility transistors were demonstrated [7]. Nowadays, a low-temperature electron mobility of several 10 6 cm 2 /V.s is currently obtained in 2D structures [8]. To achieve 1D carrier confinement it is thus of particular interest to use the wellknown GaAs/AlGaAs system and realize core-shell NW by wrapping a GaAs NW core with an AlGaAs shell layer. VLS technique has been used to produce such GaAs/AlGaAs core-shell NWs[9-11], but up to now these heterostructures have been mainly characterized by photoluminescence [11,12] due to difficulty in achieving good electrical contacts.The standard technique to contact a NW is to mechanically detach them from the growth substrate, and after dispersion on an insulating substrate, to evaporate contact pads by lithography. This technique may suffer from the random positioning of the wires, from the oxidation of the AlGaAs shell and from the presence of pinned charges in the insulating subtrate. In this letter, we present an original method using molecular beam epitaxy (MBE) and electron-beam lithography (EBL) to achieve modulation-doped GaAs/AlGaAs core-shell NWs embedded in a GaAs matrix. The NWs are individually connected directly on their growth substrate and show a small contact resistance enabling low-te...

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confidence: 88%

Quasi one-dimensional transport in single GaAs/AlGaAs core-shell nanowires

Lucot

Jabeen

Harmand

et al. 2011

Applied Physics Letters

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“…Recently, some research groups have shown the ability to control the crystal structure in MOCVD grown NWs (Caroff et al, 2009;Algra et al, 2008). Despite of a few successful attempts in controlling stacking faults in NWs grown by MBE, it is still a challenging task to understand the factors influencing the crystal structure (Shtrikman et al, 2009;Patriarche 2008). Although the WZ crystal phase of GaAs in NWs has been achieved by many groups by now, little is known about its electronic and optical properties.…”

Section: Molecular Beam Epitaxial Growth Of Nwsmentioning

confidence: 99%

Heterostructured III-V Nanowires with Mixed Crystal Phases Grown by Au-Assisted Molecular Beam Epitaxy

Weman¹

2010

Nanowires

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“…For example, by changing the crystal structure of GaP semiconductors from zinc blende to wurtzite, the band gap changes from indirect to direct, resulting in a significant enhancement of the efficiency of white light-emitting diodes [6]. Thus, controlling microstructure of the device made of such materials has motivated many experimental studies [6][7][8][9][10][11][12]. On the other hand, stress-induced phase transformation has CONTACT Nan Li nanli@lanl.gov Center for Integrated Nanotechnologies, MPA-CINT, Los Alamos National Laboratory, Los Alamos, NM 87545, USA and Institute for Materials Science, Los Alamos National Laboratory, Los Alamos, NM 87545, USA; Jian Wang jianwang@unl.edu Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588, USA Supplemental data for this article can be accessed here.…”

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confidence: 99%

“…https://doi.org/10.1080/21663831. 2017.1303793 been observed in these materials, via external stresses induced by heating [13], mechanical loading [14] or epitaxial burying [7]. However, such transformation is unidirectional.…”

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confidence: 99%