Heterostructured III-V Nanowires with Mixed Crystal Phases Grown by Au-Assisted Molecular Beam Epitaxy

Weman, H.

doi:10.5772/39503

Cited by 2 publications

(2 citation statements)

References 63 publications

(70 reference statements)

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“…If the growth conditions are altered such that the surface kinetics no longer dominate the growth rate, deposition on all surfaces can proceed. A change in the gas phase composition and growth conditions allows for the deposition of a 'shell' layer over the 'core', nanowire, forming a cylindrical heterojunction [57]. These types of structures are being investigated as possible electronic 1-dimensional devices.…”

Section: Article In Pressmentioning

confidence: 99%

III-V compound semiconductors: Growth and structures

Kuech

2016

Progress in Crystal Growth and Characterization of Materials

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Section: Article In Pressmentioning

confidence: 99%

III-V compound semiconductors: Growth and structures

Kuech

2016

Progress in Crystal Growth and Characterization of Materials

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“…The ability to control the crystal structure could be advantageous for catalyst free SAE, and there are few significant key parameters which can alter NW crystal structure without any catalyst, such as growth rate, growth temperature, substrate orientation and V/III ratio. [12][13][14][15] In order to ease WZ/ZB mixture, here an effort was taken on effective molar flow scaling (controlling growth rate) by keeping constant V/III ratio 264. Here, the InAs NW with the high aspect ratio is highly desired for the V/III ratio of 264, which is well agreement with other InAs-metal organic chemical vapor deposition (MOCVD) related study.…”

mentioning

confidence: 99%

Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD

Anandan

Lee

et al. 2021

ECS J. Solid State Sci. Technol.

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The effect of III-V molar flow scaling on crystal quality of selectively grown InAs nanowires on patterned Si (111) substrate is investigated by metal organic chemical vapor deposition. We found the correlations between molar flow rate scaling and selectivity and InAs crystal structure have been investigated. When the molar flow rate is higher, nanowire follows random nucleation and exhibits zincblende crystal structure, whereas growth selectivity increases to 97% at intermediate molar flow rates and nanowire exhibits wurtzite dominant crystal phase with occasional stacking faults. Once the molar flow rate is scaled-down aggressively, nanowire exhibits polytype crystal structure with small degradation in selectivity. The resistivity calculated from current-voltage curve of moderate molar flow rate InAs nanowires showed 15.9 × 10 -3 Ωcm, which was significantly (1.6 times) lower than typical InAs nanowires with low molar flow rate (25.31 × 10 -3 Ωcm). Finally, we integrate axial InSb heterostructure nanowire with two different crystal structures on InAs stem by self-catalyzed selective area epitaxy for the V/III ratio of 2. This study further offers good opportunity to tune the crystal structure of InSb with the help of In-catalyzed growth technique.

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Heterostructured III-V Nanowires with Mixed Crystal Phases Grown by Au-Assisted Molecular Beam Epitaxy

Cited by 2 publications

References 63 publications

III-V compound semiconductors: Growth and structures

III-V compound semiconductors: Growth and structures

Effect of Flow Rate Scaling on SAE-InAs Crystal Phase and Integration of Self-Catalyzed InAs/InSb Heterostructure Nanowires on Si (111) Substrate by MOCVD

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