WSe₂/MoS₂ and MoTe₂/SnSe₂ van der Waals heterostructure transistors with different band alignment

Abstract

Heterostructure field-effect transistors (hetero-FETs) are experimentally demonstrated, consisting of van der Waals heterostructure channels based on a 2D semiconductor. By optimally selecting the band alignment of the heterostructure channels, different output characteristics of the hetero-FETs were achieved. In atomically thin WSe/MoS hetero-FET with staggered energy band, the oscillating transfer characteristic and negative transconductance were realized. With near-broken-gap alignment in the MoTe/SnSe heterostructure channel, a superior reverse-biased current was obtained in the hetero-FETs, which can be analyzed as typical tunneling current. Our study on the hetero-FET-based atomically thin van der Waals heterostructure channel, provides significant inspiration and reference to novel heterostructure FETs.

In‐Plane Isotropic/Anisotropic 2D van der Waals Heterostructures for Future Devices

“…Figure a,b shows the optical image of an MoS 2 FET, GeSe FET, and an MoS 2 /GeSe junction device and their temperature‐dependent electrical I–V responses, respectively. Li et al studied the FET characteristics in another type of in‐plane isotropic/anisotropic heterostructure, namely an MoTe 2 /SnSe 2 interface . Figure c shows the optical image of an MoTe 2 /SnSe 2 heterostructure FET device and the tuning of charge carriers as a function of electrostatic gating as shown in Figure d.…”

High photoresponsivity and broadband photodetection with a band-engineered WSe2/SnSe2 heterostructure

“…van der Waals (vdW) heterojunctions, formed by stacking different individual 2D layered materials, can offer a new dimension in breaking the abovementioned intrinsic bandgap barrier. [21][22][23][24][25][26][27][28][29][30][31] In general, three types of band alignments can be categorized when different 2D materials are stacked together, 32 including type-I, 33 type-II, [34][35][36][37][38] and type-III [39][40][41][42][43] band alignments. Thus far, most of the reported vdW heterostructure photodetectors are based on the type-II band alignment to utilize the excellent electron-hole pair separation ability in heterostructures.…”

Gate-Tunable WSe2/SnSe2 Backward Diode with Ultrahigh-Reverse Rectification Ratio

“…heterostructures have been recently investigated for different device applications such as transistors [9][10][11][12] , photodetectors 13,14 , photovoltaics 15,16 and LEDs 17,18 .…”