WS2 nanosheets rooted in polyethylene terephthalate membrane for gas barrier properties improvement

Shah, Muhammad Salman; Farrukh, Sarah; Douna, Inamullah; Salahuddin, Zarrar; Hussain, Arshad; Sudais, Abubakar; Pervaiz, Erum; Pontié, Maxime; Ahmed, Mubashir

doi:10.1007/s10853-023-08165-4

Cited by 1 publication

(1 citation statement)

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“…[ 45 ] Graphene has been a significant inspiration in the discovery of several other layered materials. [ 46 ] Promising materials include MoS 2 , [ 47 ] WS 2 , [ 48 ] MoO 3 , [ 49 ] and SnS x , [ 50 ] which possess distinctive physical, chemical, and electronic features. These structures have strongly bonded in‐plane atoms constructing a 2D layer whereas each out‐of‐plane layer is joined with van der Waals forces.…”

Section: Opportunities and Challengesmentioning

confidence: 99%

Interfaces in Atomic Layer Deposited Films: Opportunities and Challenges

Zaidi,

Park,

Han

et al. 2023

Small Science

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Atomic layer deposition (ALD) is an effective method for precise layer‐wise growth of thin‐film materials and has allowed for substantial progress in a variety of fields. Advances in the technique have instigated high‐level interpretations of the relationship between nanostructure architecture and performance. An inherent part in the ALD of films is the underlying interfaces between each material, which plays a significant role in advanced electronics. Considering the impact of sandwiched substructures, it is appropriate to highlight opportunities and challenges faced by applications that rely on these interfaces. This review encompasses the current prospects and obstacles to further performance improvements in ALD‐generated interfaces. 2D electron gas, high‐k materials, freestanding layered structures, lattice matching, and seed layers, as well as prospects for future research, are explored.

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