WS2 nanosheets as a potential candidate towards sensing heavy metal ions: A new dimension of 2D materials

Neog, Ashamoni; Biswas, Rajib

doi:10.1016/j.materresbull.2021.111471

Cited by 25 publications

(18 citation statements)

References 39 publications

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“…Recently, WS 2 ‐based resistive unit has been explored regarding heavy‐metal‐ion‐sensing application in ambient conditions. [ 34 ] Following the very established scheme, it has been observed that the current–voltage ( I–V ) characteristics of the untreated WS 2 nanosheets deposited on copper electrodes exhibit linear behavior without any fluctuations, as shown in Figure 1d. [ 34,35 ] However, as discussed, it is quite possible to generate and tune noise fluctuations in layered system by changing the ambient condition and preparation process.…”

Section: Resultsmentioning

confidence: 99%

“…[ 34 ] Following the very established scheme, it has been observed that the current–voltage ( I–V ) characteristics of the untreated WS 2 nanosheets deposited on copper electrodes exhibit linear behavior without any fluctuations, as shown in Figure 1d. [ 34,35 ] However, as discussed, it is quite possible to generate and tune noise fluctuations in layered system by changing the ambient condition and preparation process. The ideal linear characteristics of the resistive system can be obtained by drop‐casting ≈100 μL of dispersed WS 2 nanosheets for three times on the top of finger‐like electrode system followed by 9 h of vacuum drying after each drop‐casting as shown in Figure 1d.…”

Section: Resultsmentioning

confidence: 99%

“…. [34,35] However, as discussed, it is quite possible to generate and tune noise fluctuations in layered system by changing the ambient condition and preparation process. The ideal linear characteristics of the resistive system can be obtained by drop-casting %100 μL of dispersed WS 2 nanosheets for three times on the top of finger-like electrode system followed by 9 h of vacuum drying after each drop-casting as shown in Figure 1d.…”

Section: Figure 1dmentioning

confidence: 99%

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Evidence of Laser‐Induced Amplification of Random Noise in WS₂ Nanosheets Based Resistive System

Neog

Biswas

2022

Physica Rapid Research Ltrs

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Electronic noises are indispensable part of stochastic resonance (SR) and other molecular neuromorphic devices. Considering the paramount significance of such devices, investigation of artificial noise generation with further amplification attributes of WS2 nanosheets based resistive unit is endeavored. To realize it, Cu interdigital electrodes (IDE) are fabricated on copper clad and chemically exfoliated hexagonal WS2 nanosheets are drop‐casted on the surface of as‐fabricated IDE. In ambient conditions as well as in the presence of resistance fluctuations and defects in the layered material, the resistive unit is found to develop noise with an average peak‐to‐peak fluctuation of ≈13 nA on the linear current–voltage (I–V) characteristics of the device. On performing irradiation with 5 mW red, green, and blue laser on to the very fabricated unit, a maximum ≈60 nA current fluctuations in the I–V characteristics are detected. Additionally, the current fluctuation is found to be more prominent for green laser than that of red and blue laser.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Figure 1dmentioning

confidence: 99%

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Evidence of Laser‐Induced Amplification of Random Noise in WS₂ Nanosheets Based Resistive System

Neog

Biswas

2022

Physica Rapid Research Ltrs

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“…For example, Wei et al fabricated a sensor based on SnO 2 /graphene oxide nanocomposite for the detection of Hg(II), Cd(II), Cu(II), and Pb(II) in drinking water [ 128 ]. Neog et al developed a WS 2 nanosheets-based sensor to detect Zn(II) [ 129 ]. Hui et al developed a titanium carbide (Ti 3 C 2 Tx) and multiwalled-carbon-nanotubes (MWNTs) nanocomposites based sensor to detect Zn(II) and Cu(II) ions [ 30 ].…”

Section: Salient Applications Of 2d Materialsmentioning

confidence: 99%

2D materials: increscent quantum flatland with immense potential for applications

et al. 2022

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Quantum flatland i.e., the family of two dimensional (2D) quantum materials has become increscent and has already encompassed elemental atomic sheets (Xenes), 2D transition metal dichalcogenides (TMDCs), 2D metal nitrides/carbides/carbonitrides (MXenes), 2D metal oxides, 2D metal phosphides, 2D metal halides, 2D mixed oxides, etc. and still new members are being explored. Owing to the occurrence of various structural phases of each 2D material and each exhibiting a unique electronic structure; bestows distinct physical and chemical properties. In the early years, world record electronic mobility and fractional quantum Hall effect of graphene attracted attention. Thanks to excellent electronic mobility, and extreme sensitivity of their electronic structures towards the adjacent environment, 2D materials have been employed as various ultrafast precision sensors such as gas/fire/light/strain sensors and in trace-level molecular detectors and disease diagnosis. 2D materials, their doped versions, and their hetero layers and hybrids have been successfully employed in electronic/photonic/optoelectronic/spintronic and straintronic chips. In recent times, quantum behavior such as the existence of a superconducting phase in moiré hetero layers, the feasibility of hyperbolic photonic metamaterials, mechanical metamaterials with negative Poisson ratio, and potential usage in second/third harmonic generation and electromagnetic shields, etc. have raised the expectations further. High surface area, excellent young’s moduli, and anchoring/coupling capability bolster hopes for their usage as nanofillers in polymers, glass, and soft metals. Even though lab-scale demonstrations have been showcased, large-scale applications such as solar cells, LEDs, flat panel displays, hybrid energy storage, catalysis (including water splitting and CO2 reduction), etc. will catch up. While new members of the flatland family will be invented, new methods of large-scale synthesis of defect-free crystals will be explored and novel applications will emerge, it is expected. Achieving a high level of in-plane doping in 2D materials without adding defects is a challenge to work on. Development of understanding of inter-layer coupling and its effects on electron injection/excited state electron transfer at the 2D-2D interfaces will lead to future generation heterolayer devices and sensors.

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“…The LOD of this WS 2 chemiresistor was 30 µL to change its electrical behavior to atypical (non-ohmic). In another study, Neog et al further explored the potential of the WS 2 chemiresistor by detecting different HMIs [ 236 ]. The WS 2 chemiresistor exhibited resistance changes towards eight different ions (As 3+ , Ni 2+ , Cu 2+ , Sn 2+ , Se 4+ , Hg 2+ , Pb 2+ and Zn 2+ ), but the most prominent resistance changes of the WS 2 chemiresistor occurred in the presence of Zn 2+ .…”

Section: Transition Metal Dichalcogenides (Tmds)-based Fetsmentioning

confidence: 99%

Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review

et al. 2021

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Heavy metal pollution remains a major concern for the public today, in line with the growing population and global industrialization. Heavy metal ion (HMI) is a threat to human and environmental safety, even at low concentrations, thus rapid and continuous HMI monitoring is essential. Among the sensors available for HMI detection, the field-effect transistor (FET) sensor demonstrates promising potential for fast and real-time detection. The aim of this review is to provide a condensed overview of the contribution of certain semiconductor substrates in the development of chemical and biosensor FETs for HMI detection in the past decade. A brief introduction of the FET sensor along with its construction and configuration is presented in the first part of this review. Subsequently, the FET sensor deployment issue and FET intrinsic limitation screening effect are also discussed, and the solutions to overcome these shortcomings are summarized. Later, we summarize the strategies for HMIs’ electrical detection, mechanisms, and sensing performance on nanomaterial semiconductor FET transducers, including silicon, carbon nanotubes, graphene, AlGaN/GaN, transition metal dichalcogenides (TMD), black phosphorus, organic and inorganic semiconductor. Finally, concerns and suggestions regarding detection in the real samples using FET sensors are highlighted in the conclusion.

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WS2 nanosheets as a potential candidate towards sensing heavy metal ions: A new dimension of 2D materials

Cited by 25 publications

References 39 publications

Evidence of Laser‐Induced Amplification of Random Noise in WS₂ Nanosheets Based Resistive System

Evidence of Laser‐Induced Amplification of Random Noise in WS₂ Nanosheets Based Resistive System

2D materials: increscent quantum flatland with immense potential for applications

Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review

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WS2 nanosheets as a potential candidate towards sensing heavy metal ions: A new dimension of 2D materials

Cited by 25 publications

References 39 publications

Evidence of Laser‐Induced Amplification of Random Noise in WS2 Nanosheets Based Resistive System

Evidence of Laser‐Induced Amplification of Random Noise in WS2 Nanosheets Based Resistive System

2D materials: increscent quantum flatland with immense potential for applications

Ten Years Progress of Electrical Detection of Heavy Metal Ions (HMIs) Using Various Field-Effect Transistor (FET) Nanosensors: A Review

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Product

Resources

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Evidence of Laser‐Induced Amplification of Random Noise in WS₂ Nanosheets Based Resistive System

Evidence of Laser‐Induced Amplification of Random Noise in WS₂ Nanosheets Based Resistive System