Writing current reduction for high-density phase-change RAM

Compositionally matched nitrogen-doped Ge2Sb2Te5/Ge2Sb2Te5 superlattice-like structures for phase change random access memory

“…2 Nevertheless, the relatively high programming current required to RESET GST-based devices from the low resistance state to the high resistance state will limit the ultimate achievable density. 3 This has led to the development of various approaches to reduce this RESET programming current.…”

Pcram

“…The increased resistance in the crystalline phase leads to a reduction in the reset current and thus improves device performance [28]. The reset current is a very critical device parameter because it determines the size of the access device which in current PCRAM technology determines the cell size.…”

“…Similarly, GeTe and doped GeTe PCRAM devices have been reported recently [21][22][23] and were shown to have very fast switching speed and improved data retention because the GeTe rich alloys are characterized by higher crystallization temperature and better stability of the amorphous phase. Ge 2 Sb 2 Te 5 is still the most commonly used material for PCRAM applications, often doped with various materials such as N, O, Sn, SiC, SiO x [24][25][26][27][28]. These dopants improve cyclability, increase crystallization temperature and resistances, and reduce grain size thus leading to better device performance.…”

Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

“…The PRAM has been regarded as one of most favorable future nonvolatile memories because of its simplicity of processing integration, high access speed, excellent endurance to cycling performance and great scalability [1]. The PRAM device is based on changing reversibly chalcogenide materials, which generate two different phases such as crystalline phase and amorphous phase.…”