Full Integration of Highly Reliable Phase Change Memory With Advanced Ring Type Bottom Electrode Contact

Abstract

We successfully developed 256Mb Phase Change Random Access Memory (PRAM) based on 0.10µm-CMOS technologies using ring type contact. The writing current with uniform CD process variation of Bottom Electrode Contact (BEC) was achieved by improving CMP process and developing core dielectric material. Also, the ring type contact scheme provided strong reliability such as the cycling endurance and data retention time for 256 Mb high density PRAM.

Controlled Electrochemical Formation of GexSbyTez using Atomic Layer Deposition (ALD)

“…In addition, E-ALD is well suited for conformal deposition. In the development of Ge x Sb y Te z for electronic storage applications, workers have, in order to lower the programming current, designed cells with specific patterns, , which will require conformal deposition.…”