Controlled Electrochemical Formation of GexSbyTez using Atomic Layer Deposition (ALD)

Liang, Xiaojing; Jayaraju, N.; Thambidurai, Chandru; Stickney, John L.

doi:10.1021/cm102672j

Cited by 25 publications

(36 citation statements)

References 52 publications

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“…This would contribute strongly to both reducing the power demands for switching and increasing the cycling lifetime. 23 Electrical characterisation was performed to demonstrate basic phase change memory functionality. 120 nm diameter pores (length = 2500 nm), although electrical cycling was not demonstrated.…”

Section: Materials Horizonsmentioning

confidence: 99%

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

et al. 2015

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We report a new method for electrodeposition of device-quality metal chalcogenide semiconductor thin films and nanostructures from a single, highly tuneable, non-aqueous electrolyte. This method opens up the prospect of electrochemical preparation of a wide range of functional semiconducting metal chalcogenide alloys that have applications in various nano-technology areas, ranging from the electronics industry to thermoelectric devices and photovoltaic materials. The functional operation of the new method is demonstrated by means of its application to deposit the technologically important ternary Ge/Sb/Te alloy, GST-225, for fabrication of nanostructured phase change memory (PCM) devices and the quality of the material is confirmed by phase cycling via electrical pulsed switching of both the nano-cells and thin films.

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Section: Materials Horizonsmentioning

confidence: 99%

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

et al. 2015

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“…[51][52][53] Raman spectra of the resulting deposits 53 indicated the presences of amorphous Ge. However, one sample examined using micro-Raman spectroscopy, Figure 12, produced a number of spectra from a particular area which displayed a band near 290 cm −1 .…”

Section: Resultsmentioning

confidence: 99%

Electrochemical Formation of Germanene: pH 4.5

Ledina

Bui

Liang

et al. 2017

J. Electrochem. Soc.

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Germanene is a single layer allotrope of Ge, with a honeycomb structure similar to graphene. This report concerns the electrochemical formation of germanene in a pH 4.5 solution. The studies were performed using in situ Electrochemical Scanning Tunneling Microscopy (EC-STM), voltammetry, coulometry, surface X-ray diffraction (SXRD) and Raman spectroscopy to study germanene electrodeposition on Au(111) terraces. The deposition of Ge is kinetically slow and stops after 2–3 monolayers. EC-STM revealed a honeycomb (HC) structure with a rhombic unit cell, 0.44 ± 0.02 nm on a side, very close to that predicted for germanene in the literature. Ideally the HC structure is a continuous sheet, with six Ge atoms around each hole. However, only small domains, surrounded by defects, of this structure were observed in this study. The small coherence length and multiple rotations domains made direct observation with surface X-ray diffraction difficult. Raman spectroscopy was used to investigate the multi-layer Ge deposits. A peak near 290 cm−1, predicted to correspond to germanene, was observed on one particular area of the sample, while the rest resembled amorphous germanium. Electrochemical studies of germanene showed limited stability when exposed to oxygen.

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“…They constitute the critical component of more feasible phase‐change memory material (Ge x Sb y Te z ) . Many technologies are emerging to meet different demands on these materials . Atomic layer deposition (ALD) is considered a promising method to provide a number of attractive film‐features with excellent large area uniformity and conformality on complex‐shaped substrates .…”

Section: Introductionmentioning

confidence: 99%

A Potential Method Using Ge{iPrNC[N(SiMe₃)₂]NiPr}₂, (Et₃Si)₂Te and Anhydrous Hydrazine for Germanium Tellurides

Ding

2017

Zeitschrift anorg allge chemie

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A germanium(II)-guanidine derivative of formula Ge{iPrNC[N(SiMe 3 ) 2 ]NiPr} 2 (1) was synthesized and characterized by 1 H NMR, 13 C NMR, elemental analysis, and X-ray diffraction method. Thermal property was also studied to identify its thermal stability and volatility. More importantly, compound 1 was synthesized to develop a new method for germanium tellurides, where anhydrous hydrazine * Dr. Y. Ding

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Controlled Electrochemical Formation of Ge_xSb_yTe_z using Atomic Layer Deposition (ALD)

Cited by 25 publications

References 52 publications

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

Electrochemical Formation of Germanene: pH 4.5

A Potential Method Using Ge{iPrNC[N(SiMe₃)₂]NiPr}₂, (Et₃Si)₂Te and Anhydrous Hydrazine for Germanium Tellurides

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Controlled Electrochemical Formation of GexSbyTez using Atomic Layer Deposition (ALD)

Cited by 25 publications

References 52 publications

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge2Sb2Te5 phase change memory

Electrochemical Formation of Germanene: pH 4.5

A Potential Method Using Ge{iPrNC[N(SiMe3)2]NiPr}2, (Et3Si)2Te and Anhydrous Hydrazine for Germanium Tellurides

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Controlled Electrochemical Formation of Ge_xSb_yTe_z using Atomic Layer Deposition (ALD)

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

Non-aqueous electrodeposition of functional semiconducting metal chalcogenides: Ge₂Sb₂Te₅ phase change memory

A Potential Method Using Ge{iPrNC[N(SiMe₃)₂]NiPr}₂, (Et₃Si)₂Te and Anhydrous Hydrazine for Germanium Tellurides