Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

Hosono, Hideo; Kikuchi, Naoto; Ueda, Naoyuki; Kawazoe, Hiroshi

doi:10.1016/0022-3093(96)80019-6

Cited by 206 publications

(131 citation statements)

References 10 publications

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“…157 Substitution of these values into eqn (13) and (14) gives values for m Sn and m O of 0.09 and À3.06 eV. The positive m O value implies that SnO has no thermodynamic stability eld, which is consistent with its metastability.…”

Section: Neutral and Charged Defectsmentioning

confidence: 50%

Understanding the defect chemistry of tin monoxide

et al. 2013

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Tin monoxide has garnered a great deal attention in the recent literature, primarily as a transparent p-type conductor. However, due to its layered structure (dictated by non-bonding dispersion forces) simulation via density functional theory often fails to accurately model the unit cell. This study applies a PBE0-vdW methodology to accurately predict both the atomic and electronic structure of SnO. Empirical van der Waals corrections improve the structure, with the calculated c/a ratio matching experiment, while the PBE0 hybrid-DFT method gives accurate band gaps (0.67 and 2.76 eV for the indirect and direct band gaps) and density of states which are in agreement with experimental spectra. This methodology has been applied to the simulation of the native intrinsic defects of SnO, to further understand the conductivity. The results indicate that n-type conductivity will not arise from intrinsic defects and that donor doping would be necessary. For p-type conduction, the Sn vacancy is seen to be the source, with the 0/À1 transition level found 0.39 eV above the valence band maximum. By considering the formation energies and transition levels of the defects at different chemical potentials, it is found that the p-type conductivity is sensitive to the O chemical potential. When the chemical potential is close to its lowest value (À2.65 eV here), the oxygen vacancy is stabilized which, whilst not leading to n-type conduction, could reduce p-type conduction by limiting the formation of hole states.

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Section: Neutral and Charged Defectsmentioning

confidence: 50%

Understanding the defect chemistry of tin monoxide

et al. 2013

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“…The high mobility should be present as long as the direct overlap of Zn 4s orbitals still exists and various scattering mechanisms limiting electron transport are minimized. Therefore, the model proposed by Hosono et al 9 and Nomura et al, 10 for high mobility amorphous metal oxides containing posttransition-metal cations, still applies to a compound incorporated with nitrogen. Certainly, other effects resulting from the involvement of both nitrogen and oxygen in the compound may additionally contribute to the high mobility observed.…”

Section: A Film Produced From Multiple Reactionsmentioning

confidence: 99%

“…More recently, amorphous indium-gallium-zinc oxide ͑IGZO͒ has been studied and developed, revealing a new path for producing high mobility amorphous semiconductor material through multicomponent post-transition-metal oxides. 9,10 Since then, TFT arrays for both AMLCD and AMOLED displays were made using IGZO. 11,12 Several other types of multicomponent metal oxide semiconductors have also been developed.…”

Section: Introductionmentioning

confidence: 99%

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Lim

White

2009

Journal of Applied Physics

117

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Zinc oxynitride semiconductor material is produced through a reactive sputtering process in which competition between reactions responsible for the growth of hexagonal zinc oxide (ZnO) and for the growth of cubic zinc nitride (Zn3N2) is promoted. In contrast to processes in which the reaction for either the oxide or the nitride is dominant, the multireaction process yields a substantially amorphous or a highly disordered nanocrystalline film with higher Hall mobility, 47 cm2 V−1 s−1 for the as-deposited film produced at 50 °C and 110 cm2 V−1 s−1 after annealing at 400 °C. In addition, it has been observed that the Hall mobility of the material increases as the carrier concentration decreases in a carrier concentration range where a multicomponent metal oxide semiconductor, indium–gallium–zinc oxide, follows the opposite trend. This indicates that the carrier transports in the single-metal compound and the multimetal compound are probably dominated by different mechanisms. Film stability and thin film transistor performance of the material have also been tested, and results are presented herein.

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“…By contrast, Hosono suggests that amorphous transparent conductive oxides require the relevant conduction band to be composed of spherical s-electrons in order to be metallic. [ 45 ] In Figure 4 the resistivity values of the Hall-bar samples with σ 300 K = 2.9 and σ 300 K = 4.2 S cm −1 (samples A and F, respectively) are plotted on a semilogarithmic scale as a function of T -1/4 . Although the lowest accessible temperature is 0.35 K, the highest resistance that can be reliably measured with the electronics employed is considered to be 10 GΩ, hence the data are cut off at this point.…”

Section: Transport Properties Far On the Insulating Sidementioning

confidence: 99%

Low‐Temperature Transport in Crystalline Ge₁Sb₂Te₄

Völker

Jost

Wuttig

2015

Adv Funct Materials

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Disorder and its reduction upon annealing play a crucial role in understanding the electrical transport in the crystalline phase‐change material Ge1Sb2Te4. Previous studies focus either on the impact of disorder at moderate temperatures or on the low‐temperature properties of crystalline films with a low degree of disorder. The present investigation describes and discusses the impact of pronounced disorder on charge transport at low temperatures. The present data reveal the existence of a metal‐to‐insulator transition (MIT), where upon increasing order the zero‐temperature limit of conductivity changes from zero (insulator) to nonzero values (metal). The position of the MIT is determined with respect to the control parameter, i.e., the disorder, which is modified through the annealing conditions. Disorder is shown to localize carriers for an exceptionally large density of states. In the most disordered films, variable range hopping is observed, enabling the determination of the localization length. At the lowest temperatures studied, deviations from Mott variable range hopping are observed, which can be explained by a transition to Efros–Shklovskii hopping due to the presence of a soft Coulomb gap.

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Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

Cited by 206 publications

References 10 publications

Understanding the defect chemistry of tin monoxide

Understanding the defect chemistry of tin monoxide

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Low‐Temperature Transport in Crystalline Ge₁Sb₂Te₄

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Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

Cited by 206 publications

References 10 publications

Understanding the defect chemistry of tin monoxide

Understanding the defect chemistry of tin monoxide

High mobility amorphous zinc oxynitride semiconductor material for thin film transistors

Low‐Temperature Transport in Crystalline Ge1Sb2Te4

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Product

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Low‐Temperature Transport in Crystalline Ge₁Sb₂Te₄