We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) 2 ⊥ (0001) 2 3 and (0001) 2 ⊥ (0001) 2 ∥ (0001) 2 3 at deposition temperature below 300°C. Films are polycrystalline grown at temperature above 300°C. The smoothness and quality of the films are significantly improved when grown onMoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over large area for practical device application.