Wind driven semiconductor electricity generator with high direct current output based on a dynamic Schottky junction

Abstract

In this study, a generator based on a metal/semiconductor dynamic Schottky junction has achieved ultrahigh and continuous direct current output by harvesting wind energy.

Pursuing the tribovoltaic effect for direct-current triboelectric nanogenerators

“…The DC-TENG coupled with wind energy provides an effective method to harvest wind power and directly power the distributed sensors in IoTs due to its ultrahigh DC output, small material wear, high durability and stability, simple structure, low cost, and good portability. 85 Compared with conventional windenergy-harvesting AC-TENGs that cannot directly drive electronic devices along with problems of low energy conversion efficiency, serious device wear and tear, short working life, and high cut-in wind speed, [86][87][88] DC-TENGs can achieve high charge density, requiring no rectification and energy storage units. [89][90][91][92][93] In brief, the multiple energy harvesting strategy can effectively enhance the DC-TENG outputs and offers an efficient way to broaden the applications of energy harvesting based on semiconductor devices.…”

“…For sensing applications, DC-TENG hybridized with wind energy or wind-driven semiconductor DC-TENGs can be used for graphene photodetectors and UV sensors. 85,[94][95][96] For energy harvesting, the harvested electrical energy by DC-TENGs can directly and continuously charge capacitors. 8,44,46 Multisource energy harvesting not only includes photonic energy, thermal energy, wind energy, and mechanical energy, but also has the multiphysics coupling effect of combined energy forms.…”

“…8,44,46 Multisource energy harvesting not only includes photonic energy, thermal energy, wind energy, and mechanical energy, but also has the multiphysics coupling effect of combined energy forms. 58,81,85 For wearable devices, the dynamic Schottky junction DC-TENGs based on an Al slider and a poly (3,4-ethylenedioxythiophene)coated textile are demonstrated to be used for flexible wearable products. 34 TENGs possess unparalleled advantages in scavenging low-frequency and micromechanical energy.…”

Broadband Insulator-Based Dynamic Diode with Ultrafast Hot Carriers Process

“…Dynamic semiconductor physics has emerged as the platform of exploring the novel semiconductor devices since the dynamic Schottky diode has been proposed [1,2]. Since the discovery of DD in 2018 [1], the novel and ultrafast mechanical-electrical coupling process at the solid-solid/solid-liquid interfacial barrier has been taken seriously due to groundbreaking physical picture, especially the unusual excitation, rebound, and transport of HCs induced by the mechanical input, which has brought the births of various evidences including the dynamic PN/Schottky/heterojunction [1,[3][4][5][6][7][8][9][10], polarized solution based DD [11,12], tunneling DD [2,10], and nonlinear synergy DD [13][14][15][16]; some excellent characters like direct-current output, high current density, flexibility, suitable inner resistance, and easy fabrication have also been proven [1,2,5], and the integrable ability has also been illustrated in recent works [17][18][19].…”

Dynamic Schottky Diode Direct‐Current Generator under Extremely Low Temperature

“…Compared to the piezoelectric and triboelectric generator, this kind of dynamic Schottky/PN diode generator has a huge current density output and simper architecture, which shows great promising in powering nanodevices. [17][18][19][20][21][22][23][24][25][26][27] Here, we demonstrate that the dynamic Schottky diode generator has a higher electricity output at extremely low temperature, the electricity output can attribute to the rebounding of otherwise diffused carriers caused by the establishment and destruction of the depletion layer. We suggest the higher carrier mobility of semiconductor at lower temperature is responsible for this enhancement.…”