Wigner ensemble Monte‐Carlo simulation of nano‐MOSFETs in degenerate conditions

Querlioz, Damien; Saint-Martin, Jérôme; Do, Van‐Nam; Bournel, A.; Dollfus, Philippe

doi:10.1002/pssc.200776565

Cited by 5 publications

(4 citation statements)

References 21 publications

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“…This approach was used for figure 12. The Wigner Monte Carlo approach was used to simulate double-gate MOSFETs [266], especially on the nano-scale [267]. In figure 26, the schematic of a nano-scale double-gate MOSFET is shown for these simulations.…”

Section: Wigner Functionsmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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Confinement in small structures has required quantum mechanics, which has been known for a great many years. This leads to quantum transport. The field-effect transistor has had no need to be described by quantum transport over most of the century for which it has existed. But, this has changed in the past few decades, as modern versions tend to be absolutely controlled by quantum confinement and the resulting modifications to the normal classical descriptions. In addition, correlation and confinement lead to a need for describing the transport by quantum methods as well. In this review, we describe the quantum effects and the method of treating by various approaches to quantum transport.

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Section: Wigner Functionsmentioning

confidence: 99%

A review of quantum transport in field-effect transistors

Ferry

Weinbub

Nedjalkov

et al. 2022

Semicond. Sci. Technol.

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“…Such oscillations are not observed in DG-MOSFET operating at room temperature ( Fig. 8b) but have been evidenced at a lower temperature of 77 K due to reduced phonon scattering [66].…”

Section: Carbon Nanotube Field-effect Transistor (Cntfet)mentioning

confidence: 82%

“…We consider here the multi-subband simulation of ultrascaled end-of-roadmap double gate MOSFETs using both semiclassical [61][62][63] and quantum [43,[64][65][66] Monte Carlo simulations. A schematic cross-section of the simulated structure is presented in Fig.…”

Section: Double-gate Metal-oxide-semiconductor Field-effect Transistomentioning

confidence: 99%

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

et al. 2009

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In this paper, we review and extend our recent works based on the Monte Carlo method to solve the Wigner-Boltzmann transport equation and model semiconductor nanodevices. After presenting the different possible approaches to quantum mechanical modelling, the formalism and the theoretical framework are described together with the particle Monte Carlo implementation using a technique fully compatible with semiclassical simulation. Examples are given to highlight the importance of considering both quantum and scattering effects in nanodevices operating at room temperature, such as resonant tunnelling diode (RTD), double-gate MOSFET and carbon nanotube FET. Quantum and semiclassical approaches are compared for transistor simulation. Finally, the phonon-induced electron decoherence in RTD and MOSFET is examined through the analysis of the density matrix elements computed from the Wigner function. This formalism is shown to be relevant for the quantitative analysis of devices operating in mixed quantum/semiclassical regime and to understand the transition between both regimes or between coherent and sequential tunnelling processes.

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“…19, 20 Yamada also compares various differentiation schemes up to the third order and simulates a three dimensional silicon nanowire transistor. Other results on the topic have been reported by Querlioz,25,26 who examines the interaction of a wave packet with a double-barrier structure through a Monte Carlo approach. 22 In our previous work on the WTE, we observe that its implementation can be problematic, especially when applied to structures where the carrier densities vary by many orders of magnitude, like in presence of thick barriers or heavily doped P + N + junctions.…”

Section: Introductionmentioning

confidence: 98%

Study of the Wigner function at the device boundaries in one-dimensional single- and double-barrier structures

Savio

Poncet

2011

Journal of Applied Physics

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In this work, we compute the Wigner distribution function on one-dimensional devices from wave functions generated by solving the Schrödinger equation. Our goal is to investigate certain issues that we encountered in implementing Wigner transport equation solvers, such as the large discrepancies observed between the boundary conditions and the solution in the neighborhood of the boundaries. By evaluating the Wigner function without solving the Wigner transport equation, we intend to ensure that the actual boundary conditions are consistent with those commonly applied in literature. We study both single-and double-barrier unbiased structures. We use simple potential profiles, so that we can compute the wave functions analytically for better accuracy. We vary a number of structure geometry, material, meshing, and numerical parameters, among which are the contact length, the barrier height, the number of incident wave functions, and the numerical precision used for the computations, and we observe how the Wigner function at the device boundaries is affected. For the double-barrier structures, we look at the density matrix function and we study a model for the device transmission spectrum which helps explain the lobelike artifacts that we observe on the Wigner function.

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Wigner ensemble Monte‐Carlo simulation of nano‐MOSFETs in degenerate conditions

Cited by 5 publications

References 21 publications

A review of quantum transport in field-effect transistors

A review of quantum transport in field-effect transistors

Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Study of the Wigner function at the device boundaries in one-dimensional single- and double-barrier structures

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