Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Querlioz, Damien; Nguyen, Huu-Nha; Saint-Martin, Jérôme; Bournel, A.; Galdin‐Retailleau, S.; Dollfus, Philippe

doi:10.1007/s10825-009-0281-3

Cited by 37 publications

(27 citation statements)

References 72 publications

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“…In this work, we consider a GaAs-based device, so the relevant scattering mechanisms are with polar optical phonons and ionized donors 28 . Well-established methods of solving the openboundary WBTE include the finite-difference approaches 13,14,29 and Monte Carlo methods 20,[30][31][32][33] . We solve Eq.…”

Section: System and Model Descriptionmentioning

confidence: 99%

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Jonasson

Knežević

2014

Phys. Rev. B

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We investigate time-dependent, room-temperature quantum electronic transport in GaAs/AlGaAs double-barrier tunneling structures (DBTSs). The open-boundary Wigner-Boltzmann transport equation is solved by the stochastic ensemble Monte Carlo technique, coupled with Poisson's equation and including electron scattering with phonons and ionized dopants. We observe well-resolved and persistent THz-frequency current density oscillations in uniformly-doped, dc-biased DBTSs at room temperature. We show that the origin of these intrinsic current oscillations is not consistent with previously proposed models, which predicted an oscillation frequency given by the average energy difference between the quasi-bound states localized in the emitter and main quantum wells. Instead, the current oscillations are driven by the long-range Coulomb interactions, with the oscillation frequency determined by the ratio of the charges stored in the emitter and main quantum wells. We discuss the tunability of the frequency by varying the doping density and profile.

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Section: System and Model Descriptionmentioning

confidence: 99%

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Jonasson

Knežević

2014

Phys. Rev. B

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“…We note that even a onedimensional problem involves the complete 3D wave vector space. The equation has been derived from first principles only recently for interactions with ionized impurities [15] and with phonons [16]. The two approaches are very different and involve a set of assumptions and approximations: a large number of dopant atoms, a fast collision approximation, a weak scattering limit and an equilibrium phonon system.…”

Section: Wigner-boltzmann Equationmentioning

confidence: 99%

Device modeling in the Wigner picture

2010

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Basic computational aspects of the Wigner function approach for modeling and simulation of electronic transport are discussed, beginning with the coherent problem, followed by the dissipative problem including scattering events, which has been recently restated in terms of a scattering-induced Wigner function correction. These alternative formulations of the computational task are discussed along with a method for separation of the Wigner potential into classical (force) and quantum components.

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“…Additionally, in such device scattering has been shown to cause the emergence of semi-classical transport, i.e. of the localization of electrons [36].…”

Section: Transition Between Quantum and Semi-classical Transportmentioning

confidence: 99%

Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation

2010

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In this paper, we detail the main numerical issues of the Monte Carlo method developed to solve the WignerBoltzmann transport equation and simulate the quantum transport in semiconductor nanodevices. In particular, we focus on the boundary conditions regarding the injection of particles and the limits of integration for the calculation of the Wigner potential which are of crucial importance for the physical correctness of simulation results. Through typical examples we show that this model is able to treat correctly purely quantum coherent and semi-classical transport situations as well. It is finally shown that to investigate devices operating in mixed quantum/semi-classical regimes and to analyze the transition between both regimes, this approach takes advantage of its full compatibility with Boltzmann algorithm.

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Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport

Cited by 37 publications

References 72 publications

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Coulomb-driven terahertz-frequency intrinsic current oscillations in a double-barrier tunneling structure

Device modeling in the Wigner picture

Implementation of the Wigner-Boltzmann transport equation within particle Monte Carlo simulation

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