Wigner Crystal and Colossal Magnetoresistance in InSb Doped with Mn

Abstract

We report magnetotransport investigation of nonmagnetic InSb single crystal doped with manganese at Mn concentration NMn ~ 1,5 × 1017 cm−3 in the temperature range T = 300 K–40 mK, magnetic field B = 0–25T and hydrostatic pressure P = 0–17 kbar. Resistivity saturation was observed in the absence of magnetic field at temperatures below 200 mK while applied increasing external magnetic field induced colossal drop of resistivity (by factor 104) at B ~ 4T with further gigantic resistivity increase (by factor 104) at 15T. Under pressure, P = 17 kbar, resistivity saturation temperature increased up to 1,2 K. Existing models are discussed in attempt to explain resistivity saturation, dramatic influence of magnetic field and pressure on resistivity with the focus on possible manifestation of three dimensional Wigner crystal formed in InSb by light electrons and heavy holes.

Magnetotransport properties of InSb-MnSb nanostructured films

“…It is in a good agreement with E A = 0.28 meV observed earlier in [22] for p -InSb(Mn) monocrystals at N Mn = 1.6·10 17 cm -3 . The field dependences of magnetoresistance (∆ρ/ρ=(ρ B -ρ 0 )/ρ 0 ) of the InSb-MnSb film at different temperatures are shown in Fig.…”

Negative magnetoresistance in indium antimonide whiskers doped with tin

“…Colossal decrease of resistivity in p-type InSb(Mn) crystals was revealed in magnetic fields 0-4 T at superlow temperatures [5]. The Hall constant changes its sign under variable temperature and magnetic field.…”

“…Negative magnetoresistance (NMR) was observed in InSb crystals at low temperatures and weak magnetic fields [1][2][3][4][5][6][7][8][9]. There are various interpretations of this effect due to different mechanisms of scattering of charge carriers.…”

“…Magnetoresistance of nonmagnetic InSb single crystal doped with manganese with impurity concentration 1.5⋅10 17 cm −3 was investigated in the temperature range 40 mK-300 K and magnetic fields 0-25 T [5][6][7][8]. Colossal decrease of resistivity in p-type InSb(Mn) crystals was revealed in magnetic fields 0-4 T at superlow temperatures [5].…”

“…There are various interpretations of this effect due to different mechanisms of scattering of charge carriers. In particular: 1) surface boundary scattering [1,2]; 2) scattering on magnetic impurities [3][4][5]; 3) scattering on nonmagnetic impurities with concentration in the vicinity to metal-insulator transition (MIT) [5][6][7][8][9].…”