Analysis of the experimental data for impurity‐band conduction in Mn‐doped InSb

Abstract

The experimental data of the temperature‐dependent Hall‐effect measurements on Mn‐doped p ‐type InSb samples, which exhibit the anomalous sign reversal of the Hall coefficient to negative at low temperatures, have been analyzed on the basis of the nearest‐neighbor hopping model in an impurity band. It is shown that the anomalous sign reversal of the Hall coefficient to negative can be well explained with assuming the hopping Hall factor in the form of Ahop = (kBT /J3) exp (KNNHT3/T) with the negative sign of J3.