Width and split effects on effective spin flip through armchair phosphorene nanoribbons

Safipour, Zahra; Shabani, Faezeh; Faizabadi, Edris

doi:10.1140/epjp/s13360-022-03509-6

Cited by 3 publications

(5 citation statements)

References 34 publications

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“…In other study, a fully spin polarized current has been reported in normal/ferromagnetic/normal phosphorene nanoribbon junctions for both direction armchair and zigzag [48]. Furthermore, in [45,46,[49][50][51][52] the ballistic transport in the presence of a magnetic field has been investigated extensively. It was found that the transmission and conductance are strongly sensible to the induced magnetic field [45].…”

Section: Introductionmentioning

confidence: 95%

“…Boroughani et al [50] investigated the spin polarization in ferromagnetic barrier phosphorene superlattice under an exterior magnetic field. The spin flip through armchair phosphorene nanoribbons were studied [51], finding that the increasing of the ribbon width, induces a diminution of spin-flip effect. Recently, Oubram et al [52] conducted an investigation on the transport properties in ferromagnetic periodic superlattices in phosphorene.…”

Section: Introductionmentioning

confidence: 99%

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Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Oubram

2024

J. Phys.: Condens. Matter

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Tuning the band gap is of utmost importance for the practicality of 2D materials in the semiconductor industry. In this study, we investigate the ballistic transport and the tunneling magnetoresistance (TMR) properties within a modulated gap in a Ferromagnetic/Normal/Ferromagnetic (F/N/F) phosphorene junction. The theoretical framework is established on a Dirac-like Hamiltonian, the transfer matrix method, and the Landauer-Büttikerr formalism to characterize electron behavior and obtain transmittance, conductance and TMR. Our results reveal that a reduction in gap energy leads to an enhancement of conductance for both parallel and anti-parallel magnetization configurations. In contrast, a significant reduction and redshift in TMR have been observed. Notably, the application of an electrostatic field in a gapless phosphorene F/N/F junction induces a blueshift and a slight increase in TMR. Furthermore, we found that introducing an asymmetrically applied electrostatic field in this gapless junction results in a significant reduction and redshift in TMR. Additionally, intensifying the applied magnetic field leads to a substantial increase in TMR. These findings could be useful for designing and implementing practical applications that require precise control over the tunneling magnetoresistance properties of a phosphorene F/N/F junction with a modulated gap.

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Section: Introductionmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Oubram

2024

J. Phys.: Condens. Matter

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“…Half-magnetic semiconductors have been the subject of theoretical studies on magnetoresistance and spin filtering [27]. It has been found that further impacts emerging from specific sorts of edges and restrictions, doping [28,29], external strain [30], multi-layer stacking [31], spin-orbit interaction [32,33], and electric field can strongly affect the optical, transport, and electronic properties of PNRs [34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Exploring spin photovoltaics in defective armchair phosphorene nanoribbons

Abbasi,

Farghadan

2024

Phys. Scr.

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This study explores the spin photovoltaic potential within armchair phosphorene nanoribbons (APNRs) that feature a periodic distribution of monovacancies (MVs) under the influence of light radiation. We investigate spin-semiconducting behavior induced by MV defects by utilizing both the mean-field Hubbard approximation and the self-consistent non-equilibrium Green's function model. This behavior is characterized by localized and anisotropic band structures around the Fermi energy, particularly within the antiferromagnetic phase. The existence of spin-splitting band gaps in defective APNRs not only enables the crafting of spin-optoelectronic nanodevices but also allows for the manipulation of electronic structure behavior with applied electric fields in both the vertical and transverse directions. Notably, the implementation of electric fields, offering tunability in electronic structure, results in varied spin photovoltaic responses encompassing a broad spectrum of photon energies from visible to ultraviolet. This research reveals promising avenues for advancing the field of spin-optoelectronic devices by MVs in APNRs.

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“…From the experimental standpoint, there are several investigations devoted to produce high quality and stable phosphorene layers [26][27][28], also to develop potential devices based on phosphorene such as biosensors [29,30] optoelectronic devices [31,32], flexible and wearable pressure sensors [33] and energy storage systems [34,35]. Regarding superlattices in phosphorene there are several reports addressing the impact of periodic modulation on the electronic, optical and transport properties [36][37][38][39][40][41][42][43][44][45][46]. For instance, De Sarkar et al [36].…”

Section: Introductionmentioning

confidence: 99%

“…In particular, the conductance shows a strong anisotropy along the different directions, caused by the unique magnetic superlattice band structure and controllable by the incident energy, the magnetic field and the periodic magnetic modulation. Safipourel et al [44] studied spin flip through armchair phosphorene nanoribbons. They found that increasing the ribbon width, the spin-flip effect is diminished.…”

Section: Introductionmentioning

confidence: 99%

Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

Oubram

Sadoqi

Cisneros-Villalobos

et al. 2023

J. Phys.: Condens. Matter

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Periodic superlattices constitute ideal structures to modulate the transport properties of two-dimensional materials. In this paper, we show that the tunneling magnetoresistance in phosphorene can be tuned effectively through periodic magnetic modulation. Deltaic magnetic barriers are arranged periodically along the phosphorene armchair direction in parallel and anti-parallel magnetization fashion. The theoretical treatment is based on a low-energy effective Hamiltonian, the transfer matrix method and the Landauer-B¨uttiker formalism. We find that the periodic modulation gives rise to oscillating transport characteristics for both parallel and anti-parallel magnetization configurations. More importantly, by adjusting the electrostatic potential appropriately we find Fermi energy regions for which the anti-parallel magnetization conductance is reduced significantly while the parallel magnetization conductance keeps considerable values, resulting in an effective tunneling magnetoresistance that increases with the magnetic field strength. These findings could be useful in the design of magnetoresistive devices based on magnetic phosphorene superlattices.

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Width and split effects on effective spin flip through armchair phosphorene nanoribbons

Cited by 3 publications

References 34 publications

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

Exploring spin photovoltaics in defective armchair phosphorene nanoribbons

Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

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