Tuning the magnetoresistance properties of phosphorene with periodic magnetic modulation

Abstract

Periodic superlattices constitute ideal structures to modulate the transport properties of two-dimensional materials. In this paper, we show that the tunneling magnetoresistance in phosphorene can be tuned effectively through periodic magnetic modulation. Deltaic magnetic barriers are arranged periodically along the phosphorene armchair direction in parallel and anti-parallel magnetization fashion. The theoretical treatment is based on a low-energy effective Hamiltonian, the transfer matrix method and the Landauer-B¨uttiker formalism. We find that the periodic modulation gives rise to oscillating transport characteristics for both parallel and anti-parallel magnetization configurations. More importantly, by adjusting the electrostatic potential appropriately we find Fermi energy regions for which the anti-parallel magnetization conductance is reduced significantly while the parallel magnetization conductance keeps considerable values, resulting in an effective tunneling magnetoresistance that increases with the magnetic field strength. These findings could be useful in the design of magnetoresistive devices based on magnetic phosphorene superlattices.

Gap engineering effects on transport and tunneling magnetoresistance properties in phosphorene ferromagnetic/normal/ferromagnetic junction

“…In other study, a fully spin polarized current has been reported in normal/ferromagnetic/normal phosphorene nanoribbon junctions for both direction armchair and zigzag [48]. Furthermore, in [45,46,[49][50][51][52] the ballistic transport in the presence of a magnetic field has been investigated extensively. It was found that the transmission and conductance are strongly sensible to the induced magnetic field [45].…”

“…The spin flip through armchair phosphorene nanoribbons were studied [51], finding that the increasing of the ribbon width, induces a diminution of spin-flip effect. Recently, Oubram et al [52] conducted an investigation on the transport properties in ferromagnetic periodic superlattices in phosphorene. Their findings revealed that the application of a magnetic field contributes to a reduction in the conductance of both parallel and antiparallel ferromagnetic configurations.…”

“…As is known, the magnetoresistance (MR) particularly the tunneling MR (TMR) is a key property for spintronic devices. Recent studies have presented several interesting findings about TMR properties of phosphorene and its application in ferromagnetic nanodevices [42,47,[52][53][54][55][56]. For instance, the TMR in phosphorene-based spintronic devices with Co electrodes has been investigated theoretically [56].…”

“…They found the large positive TMR can be obtained when a perpendicular electric field is applied. Recently, Oubram et al [52] demonstrated a significant enhancement in TMR within phosphorene ferromagnetic superlattices with an increase in the applied magnetic field. Zare et al [47] investigated theoretically the charge and spin transport characteristics of in a monolayer phosphorene ferromagnetic/normal/ferromagnetic (F/N/F) structure in which the two ferromagnetic regions with noncollinear magnetization.…”

Ferromagnetic transition-metal doped ɛ-phosphorene

“…Since its first successful fabrication, black phosphorene (αphosphorene) has garnered significant interest for a range of applications (see the reviews and references therein) [1][2][3][4]. Phosphorene's remarkable electrical and magnetic properties [5][6][7][8][9] make it a promising candidate for use in electronics, spintronics, and gas sensors [6,8,[10][11][12][13][14]. However, the primary challenge for practical applications of 2D black phosphorus is its poor ambient stability, necessitating encapsulation by inert 2D materials such as h-BN [14,15].…”