Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Balaghi, Leila; Bussone, Genziana; Grifone, R.; Hübner, René; Grenzer, J.; Ghorbani‐Asl, Mahdi; Krasheninnikov, Arkady V.; Schneider, Harald; Helm, M.; Dimakis, E.

doi:10.1038/s41467-019-10654-7

Cited by 99 publications

(97 citation statements)

References 60 publications

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“…32 More recently, the tunability of the GaAs bandgap up to 1.42 µm has been demonstrated exploiting strain partitioning in NWs. 33 LEDs operating in the telecommunication S band (1.46 -1.53 µm) have been demonstrated for InP based nanopillars on Si with radial (In,Ga)As shell QW. 34 Nanoneedle/nanopillar structures resemble NWs, but they typically exhibit base diameters in the micrometer range and are characterized by a tapered geometry, which has been demonstrated to sustain helicoidal guided photonic modes.…”

Section: Resultsmentioning

confidence: 99%

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Herranz

Corfdir

Luna

et al. 2019

ACS Appl. Nano Mater.

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Core-shell GaAs-based nanowires monolithically integrated on Si constitute a promising class of nanostructures that could enable light emitters for fast inter-and intrachip optical connections. We introduce and fabricate a novel coaxial GaAs/(In,Ga)As dot-in-a-well nanowire heterostructure to reach spontaneous emission in the Si transparent region, which is crucial for applications in Si photonics. Specifically, we achieve room temperature emission at 1.27 µm in the telecommunication O band. The presence of quantum dots in the heterostructure is evidenced by a structural analysis based on scanning transmission electron microscopy. The spontaneous emission of these nanowire structures is investigated by cathodoluminescence and photoluminescence spectroscopy. Thermal redistribution of charge carriers to larger quantum dots explains the long wavelength emission achieved at room temperature. Finally, in order to demonstrate the feasibility of the presented nanowire heterostructures as electrically driven light emitters monolithically integrated on Si, a light emitting diode is fabricated exhibiting room-temperature electroluminescence at 1.26 µm.

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Section: Resultsmentioning

confidence: 99%

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Herranz

Corfdir

Luna

et al. 2019

ACS Appl. Nano Mater.

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“…making Ge a direct band gap material (Sukhdeo et al, 2014). Band gap engineering was also performed in straight GaAs/In x Ga (1Àx) As core-shell NWs, and hydrostatic strains of up to 7% could be achieved (Balaghi et al, 2019). Owing to the large aspect ratio of NWs, not only the absolute values of strain but also the strain gradient can be sizable in bent NWs.…”

Section: Introductionmentioning

confidence: 99%

X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

et al. 2020

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Core–shell nanowires (NWs) with asymmetric shells allow for strain engineering of NW properties because of the bending resulting from the lattice mismatch between core and shell material. The bending of NWs can be readily observed by electron microscopy. Using X-ray diffraction analysis with a micro- and nano-focused beam, the bending radii found by the microscopic investigations are confirmed and the strain in the NW core is analyzed. For that purpose, a kinematical diffraction theory for highly bent crystals is developed. The homogeneity of the bending and strain is studied along the growth axis of the NWs, and it is found that the lower parts, i.e. close to the substrate/wire interface, are bent less than the parts further up. Extreme bending radii down to ∼3 µm resulting in strain variation of ∼2.5% in the NW core are found.

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“…The controlled growth of lattice‐mismatched epitaxial layers with built‐in strains [ 1–5 ] is fundamental to engineer the electronic band structure of semiconductors for the manufacture of optoelectronic devices such as photodiodes, [ 6–8 ] light emitters, [ 9 ] quantum dots, [ 10–12 ] nanowires, [ 13 ] and highly efficient solar cells. [ 14,15 ] In general, in III–V materials, a large lattice mismatch between two materials exists whenever ( a epi – a s ) − a s > 2%, [ 16,17 ] where a epi and a s are the lattice parameters of the epitaxial layer and the substrate, respectively.…”

Section: Introductionmentioning

confidence: 99%

Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates

Rocha-Reina

Castillo-Baldivia

Pozo-Zamudio

et al. 2020

Physica Status Solidi (a)

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Herein, a report on the growth of crystalline truncated pyramid microstructures by liquid‐phase epitaxy of Ga–As liquid phase on GaP (001) substrates under nonequilibrium (NEQ) conditions with different contact times and growth temperatures is provided. The micropyramids (MPs) have rectangular bases which are between 5 and 10 μm long, with the long sides aligned with the [110] direction. Remarkably, the results show that the growth rates of the MP under NEQ are very high compared with those of traditional epitaxial layers grown under near‐equilibrium conditions. Spatially resolved microphotoluminescence mappings reveal a spatial dependence of the near‐band edge emission in both wavelength and intensity within a single MP. The measured emission‐wavelength range corresponds to ternary GaAs1–xPx alloys, which attests to the diffusion of P atoms from the substrate into the MPs during growth. The content of P atoms in the MPs is confirmed by spatially resolved energy‐dispersive X‐ray spectroscopy. Both studies show that the concentration of P is higher in the {111} planes than in the rest of the MP. A thermodynamic argument is proposed to support the experimental findings.

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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

Cited by 99 publications

References 60 publications

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

Coaxial GaAs/(In,Ga)As Dot-in-a-Well Nanowire Heterostructures for Electrically Driven Infrared Light Generation on Si in the Telecommunication O Band

X-ray diffraction reveals the amount of strain and homogeneity of extremely bent single nanowires

Crystalline Truncated Micropyramids Grown from GaAs Liquid Phase on GaP (001) Substrates

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