Wideband dual‐mode complementary metal–oxide–semiconductor receiver

Abstract

A dual-mode complementary metal-oxide-semiconductor (CMOS) receiver operating from 1 to 2 GHz is presented. The proposed receiver employs a switchable low-noise amplifier (LNA) and two separated down-conversion paths to realise dual-mode operation. For receiving weak signals without large blockers, the receiver works in the high-gain mode which adopts the common gate (CG)-common source (CS) LNA and the active-mixer-based down-conversion path to achieve high gain and low noise figure (NF). In the case of large in-band blockers, the receiver works in the high linearity mode, which uses the LNA as a low-noise transimpedance amplifier followed by a 25% duty-cycle current-driving passive mixer and a transimpedance amplifier based on current buffer to obtain high in-band linearity. Implemented in a 0.18 μmC M O S technology, this receiver achieves 4.9 dB NF and a voltage gain range of 29.4-92.6 dB in high-gain mode, whereas +0.9 dBm in-band input-referred third-order interception and a voltage gain range of 15.8-20.1 dB in high linearity mode.

Recent advancement in the design of mixers for software‐defined radios

“…From Table 3, most of the works have been implemented in 180 nm CMOS technology. High performance was achieved by using switching 109,116 and multi-gated transistor technique. 107 In Table 3, the highest NF is as less as 1.5 dB and the maximum IIP3 is 12.5 dBm.…”

A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS

“…As discussed in Ref. [7], the LNA's noise and linearity have a decisive influence on the whole receiver system, deserving continuous exploration regarding the LNA methodology and structure. On the receiver system hierarchy level, the LF architecture itself also has evolved into several representative variations as displayed in Figure 1.…”