A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS

Guo, Benqing; Wang, Haishi; Wang, Huifen; Zhou, Wenjiao; Jalali, Kianoosh

doi:10.1049/cds2.12124

Cited by 10 publications

(6 citation statements)

References 23 publications

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“…Nonlinearity is a common phenomenon in the electronic and communication world, couples of models are developed to explain this complex mechanism embedded and provide insightful predictions [15][16]. The compact IP3 metric, however, is commonly used in the electronic domain to describe the distortion behaviors of active devices [17]. Specifically, a two-tone test with fIF1=40 MHz and fIF2=50 MHz under 2 GHz fLO, indicates an inband (IB) IIP3 of -12.8 dBm in measurement, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

A Baseband-Noise-Cancelling Mixer-First CMOS Receiver Frontend Attaining 220 MHz IF Bandwidth With Positive-Capacitive-Feedback TIA

et al. 2023

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In this paper, by using the baseband noise cancellation, a CMOS mixer-first analog receiver with power reduction is proposed. Based on a current-mirror transimpedance amplifier structure, positive capacitive feedback is applied to manipulate poles/zeros location, enabling a wide baseband bandwidth and out-of-band second-order filtering profile. The additional radio frequency N-path filtering and baseband 40dB/dec roll-off absorb out-of-band interferences. The presented receiver frontend is fabricated in a standard 65 nm CMOS process. Measured results demonstrate a minimal noise figure of 2.2 dB, and an average voltage gain of 32.2 dB across the 220 MHz intermediate frequency range. The in-band and out-of-band third-order input intercept point manifests -12.8 dBm and 15.5 dBm respectively. The presented receiver circuit draws ~32 mW at a typical 1 GHz local oscillator stimulus.INDEX TERMS mixer-first receiver, noise cancellation, wideband IF, capacitive feedback.

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Section: Resultsmentioning

confidence: 99%

A Baseband-Noise-Cancelling Mixer-First CMOS Receiver Frontend Attaining 220 MHz IF Bandwidth With Positive-Capacitive-Feedback TIA

et al. 2023

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“…For reducing noise resistance, the diode-connected transistor is used as a current limiter (Figure 1c). From Equation (10), and concerning the NF equation, high enough values of R B in Figure 1 result in smaller values of R n . When this leakage noise resistance degrades due to body biasing, also the noise factor will decrease:…”

Section: The Noise Performance Of Ttd Cellmentioning

confidence: 92%

“…These cells delay the incident signal instead of delay approximation with phase change. Moreover, there are some other applications for below 6 GHz TTD systems for multi-standard applications, data processing, 6G, and IoT [9][10][11].…”

Section: Introductionmentioning

confidence: 99%

A PVT resilient true‐time delay cell

Yarahmadi

Jannesari

2023

IET Circuits, Devices & Syst

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A true-time delay (TTD) cell in TSMC 0.18 μm CMOS technology for 1-5 GHz applications is presented. Process variations, ageing effects, field variations, and other non-idealities have some impacts on the TTD cell's devices. One of the vulnerable specifications of TTD cells is their delay variation. While the TTD cell works in a delay line, the cell must have a constant and robust delay in the frequency band. For this matter, the body bias technique is presented and applied to the inductor-less TTD cell. With this technique, the threshold voltage can be manipulated intentionally. So, any variation in this voltage can be compensated with the body biasing of transistors. The simulation results show the TTD cell's robust performance against non-idealities, while delay variation improves more than 3� times in the frequency band of interest. This TTD cell provides a 50.95 pS delay with only 2% variation, while S 11 and S 22 parameters are lower than −10 dB in the 1-5 GHz frequency band. IIP3 of the TTD cell is about 2.7 dBm, and the power consumption is 20.5 mW. K E Y W O R D Sall-pass filter, active filters, analogue integrated circuits, CMOS analogue integrated circuits, continuous time systems, integrated circuit design, low-power electronics, radio frequency filters, Timed array system, True-Time-Delay cellThis is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

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“…Nowadays, linearity and dynamic range are critical issues for radars, A/D conversion, multi-standard applications like IoT or 5G/6G communications, receiver chains in communication systems, data processing, and imaging sensors [1][2][3][4][5][6]. Multiantenna systems like phased array topologies are suitable for this matter since they can do analog beamforming with very good performance in narrow-band applications [7].…”

Section: Introductionmentioning

confidence: 99%

Wideband True Time Delay Cells

Yarahmadi¹

2023

UWB Technology - New Insights and Developments

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True-time delay (TTD) cells are used in timed array receivers for wideband multi-antenna topologies. TTD cells are divided into two major categories: silicon-based and non-silicon-based structures. Non-silicon-based structures have very good bandwidth but are bulky in the below 10 GHz frequency band. Silicon-based TTD cells are much more compact and better candidates for integrated circuit (IC) design. Passive and active approaches are the two ways to have a silicon-based TTD cell. Passive TTD cells are built by transmission lines (TL), artificial transmission lines (ATL), and LC ladder networks. Their power consumption is very low, and the delay bandwidth is good, but they are still bulky at low frequencies like below 5 GHz applications. Active all-pass filters as TTD cells are presented for these issues. In this chapter, we will discuss the challenges of inductor-based TTD cells. Then, inductor-less TTD cells are presented to address some of the previous structure’s issues. Finally, we will talk about these structures’ challenges as well. Then, the nonidealities effects on the TTD cell’s performance are investigated, and the body bias technique is presented to address these issues.

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A 1–5 GHz 22 mW receiver frontend with active‐feedback baseband and voltage‐commutating mixers in 65 nm CMOS

Cited by 10 publications

References 23 publications

A Baseband-Noise-Cancelling Mixer-First CMOS Receiver Frontend Attaining 220 MHz IF Bandwidth With Positive-Capacitive-Feedback TIA

A Baseband-Noise-Cancelling Mixer-First CMOS Receiver Frontend Attaining 220 MHz IF Bandwidth With Positive-Capacitive-Feedback TIA

A PVT resilient true‐time delay cell

Wideband True Time Delay Cells

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