Wide-Spectrum Polarization-Sensitive Photodetector Based on Spontaneous GaTe/Ga2(TexO1-x)5 Heterostructure

Zhou, Jianmin; Xiong, Tao; Guo, Zhengfeng; Xin, Kaiyao; Wang, Xiaoyu; Gu, Honggang; Liu, Yueyang; Liu, Liyuan; Yang, Juehan; Wei, Zhongming

doi:10.1109/ted.2023.3242932

Cited by 2 publications

(3 citation statements)

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“…Additionally, it is noteworthy that the photodetector exhibits a fast and clear response at 1064 nm, much longer than the detection wavelength of pristine m-GaTe and h-GaTe devices. 42,43 This result shows that the response of untreated T-GaTe in the NIR region is comparable to that of oxygen intercalation GaTe devices, 44 which holds great significance in broadband photodetection. To further evaluate the photoresponse characteristics of the device across the visible to NIR range, current−voltage (I−V) curves were measured in the dark and under different laser illuminations, as shown in Figure 4e.…”

Section: ■ Results and Discussionmentioning

confidence: 81%

“…To visually display the photoresponse of the device, Figure d shows the photocurrent mapping image of the photodetector by scanning photocurrent microscopy at 785 nm under a bias voltage of 0.1 V. The channel area between the electrodes was measured to be approximately 35 × 25 μm 2 . According to the photocurrent distribution, the photocurrent in the center of the channel was significantly higher than in the contact region, indicating that the photoconductive effect could play a major role in the generation of photocurrent. , …”

Section: Resultsmentioning

confidence: 97%

“…According to the photocurrent distribution, the photocurrent in the center of the channel was significantly higher than in the contact region, indicating that the photoconductive effect could play a major role in the generation of photocurrent. 41,42 To further investigate the photoresponse of 2D GaTe, the switching behaviors of the photodetector under periodic illumination with different laser wavelengths from the visible to NIR range, including (a) 532 nm, (b) 633 nm, (c) 785 nm, and (d) 1064 nm, are presented in Figure 4. The measurements were carried out under a bias of 0.1 V at different power levels (86 μW at 532 nm, 42.5 μW at 633 nm, 31.65 μW at 785 nm, and 82 μW at 1064 nm).…”

Section: ■ Results and Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy

Cheng,

Wang,

et al. 2024

ACS Appl. Mater. Interfaces

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semiconductors have recently attracted considerable attention due to their promising applications in future integrated electronic and optoelectronic devices. Large-scale synthesis of high-quality 2D semiconductors is an increasingly essential requirement for practical applications, such as sensing, imaging, and communications. In this work, homogeneous 2D GaTe films on a centimeter scale are epitaxially grown on fluorphlogopite mica substrates by molecular beam epitaxy (MBE). The epitaxial GaTe thin films showed an atomically 2D layered lattice structure with a T phase, which has not been discovered in the GaTe geometric isomer. Furthermore, semiconducting behavior and high mobility above room temperature were found in T-GaTe epitaxial films, which are essential for application in semiconducting devices. The T-GaTe-based photodetectors demonstrated respectable photodetection performance with a responsivity of 13 mA/W and a fast response speed. By introducing monolayer graphene as the substrate, we successfully realized high-quality GaTe/graphene heterostructures. The performance has been significantly improved, such as the responsivity was enhanced more than 20 times. These results highlight a feasible scheme for exploring the crystal phase of 2D GaTe and realizing the controlled growth of GaTe films on large substrates, which could promote the development of broadband, high-performance, and large-scale photodetection applications.

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Section: ■ Results and Discussionmentioning

confidence: 81%

Section: Resultsmentioning

confidence: 97%

Section: ■ Results and Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy

Cheng,

Wang,

et al. 2024

ACS Appl. Mater. Interfaces

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Homopolar Chemical Bonds Induce In‐Plane Anisotropy in Layered Semiconductors

Tan,

Wang,

Zhang

et al. 2024

Small Science

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Main‐group layered binary semiconductors, in particular, the III–VI alloys in the binary Ga–Te system are attracting increasing interest for a range of practical applications. The III–VI semiconductor, monoclinic gallium monotelluride (m‐GaTe), has been recently used in high‐sensitivity photodetectors/phototransistors and electronic memory applications due to its anisotropic properties yielding superior optical and electrical performance. Despite these applications, the origin of such anisotropy, namely the complex structural and bonding environments in GaTe nanostructures remain to be fully understood. In the present work, a comprehensive atomic‐scale characterization of m‐GaTe is reported by element‐resolved atomic‐scale microscopy experiments, enabling a direct measure of the in‐plane anisotropy at the sub‐Angstrom level. It is shown that these experimental images compare well with the results of first‐principles modeling. Quantum‐chemical bonding analyses provide a detailed picture of the atomic neighbor interactions within the layers, revealing that vertical GaGa homopolar bonds get stronger when they are distorted and rotated, inducing the strong in‐plane anisotropy. Beyond GaTe, using a systematic screening over the Materials Project database, the four additional low‐symmetric layered crystals with similar distorted tetrahedral patterns are identified, indicating that the homopolar‐bond‐induced anisotropy is a more generic feature in these layered van der Waals (vdW) materials.

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Wide-Spectrum Polarization-Sensitive Photodetector Based on Spontaneous GaTe/Ga₂(Te_xO_1-x)₅ Heterostructure

Cited by 2 publications

References 31 publications

Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy

Broadband Photodetection of Centimeter-Scale T-Phase Gallium Telluride Grown by Molecular Beam Epitaxy

Homopolar Chemical Bonds Induce In‐Plane Anisotropy in Layered Semiconductors

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