Homopolar Chemical Bonds Induce In‐Plane Anisotropy in Layered Semiconductors
Jieling Tan,
Jiang‐Jing Wang,
Hang‐Ming Zhang
et al.
Abstract:Main‐group layered binary semiconductors, in particular, the III–VI alloys in the binary Ga–Te system are attracting increasing interest for a range of practical applications. The III–VI semiconductor, monoclinic gallium monotelluride (m‐GaTe), has been recently used in high‐sensitivity photodetectors/phototransistors and electronic memory applications due to its anisotropic properties yielding superior optical and electrical performance. Despite these applications, the origin of such anisotropy, namely the co… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.