Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Matsuoka, Takashi; Yoshimoto, Naoto; Sasaki, T.; Katsui, Akinori

doi:10.1007/bf02655831

Cited by 254 publications

(126 citation statements)

References 8 publications

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“…The etch rate of the back side in HCl was observed to double-check the assignment. [5] The substrate was outgassed at 700°C in vacuum before growth. Even at 600°C, Zn coming off the substrate was observable on the quadrupole mass spectrometer in the vacuum system.…”

Section: Substrate Preparationmentioning

confidence: 99%

“…The polarity of a substrate can be measured quite easily and unambiguously by measuring the sign of the piezoelectric coefficient, or by measuring etch rates in HCl or H 2 NO 3 . [5] Although ZnO has been touted as a promising substrate for GaN and InGaN growth, [5] it has had a history of disappointing results. [6] Because ZnO is attacked at high temperatures in reducing atmospheres, growth by MOVPE and similar techniques must be done under sub-optimum conditions.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth of Ga-face and N-face GaN films using ZnO Substrates

Hellman¹,

Buchanan²,

Wiesmann³

et al. 1996

MRS Internet j. nitride semicond. res.

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We have used plasma molecular beam epitaxy on (0 0 0 1) and (0 0 0 ) ZnO substrates to induce epitaxial growth of GaN of a known polarity. The polarity of the ZnO substrates can be easily and unambiguously determined by measuring the sign of the piezoelectric coefficient. If we assume that N-face GaN grows on O face ZnO and that Ga-face GaN grows on Zn face ZnO, then we can study the growth of both Ga and N faces. The most striking difference is the doping behavior of the two faces. Growth on the Ga-face is characterized by a higher carrier concentration and a lower threshold for Ga droplet formation.

show abstract

Section: Substrate Preparationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Growth of Ga-face and N-face GaN films using ZnO Substrates

Hellman¹,

Buchanan²,

Wiesmann³

et al. 1996

MRS Internet j. nitride semicond. res.

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show abstract

“…1,2 They have been identified by x-ray diffraction, low energy electron diffraction, 3 photoelectron diffraction, 4 coaxial impact-collision ion scattering spectroscopy, 5 the sign of the piezoelectric coefficient, and etch rate measurements in HCl or H 2 NO. 6 In the current paper we compare photoluminescence ͑PL͒ measurements on the two polar faces of ZnO. Results from the two faces have much in common-the strongest emission comes from a set of lines associated with neutraldonor-bound excitation (D 0 ,X) complexes 7 -but there are two major differences.…”

Section: Introductionmentioning

confidence: 97%

Photoluminescence measurements from the two polar faces of ZnO

Sherriff

Reynolds

Look

et al. 2000

Journal of Applied Physics

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The crystal structure of ZnO is wurtzite and the stacking sequence of atomic layers along the ''c'' axis is not symmetric. As a result, a ZnO crystal surface that is normal to the c axis exposes one of two distinct polar faces, with ͑0001͒ being considered the O face and ͑0001͒ the Zn face. Photoluminescence ͑PL͒ measurements on the two faces reveal a striking difference. Two transitions are observed in PL that are dominant from the O face and barely observed in PL from the Zn face. These lines are identified as phonon replicas of a particular D 0 ,X transition using energy separations, excitation dependence, and time-resolved PL measurements. In addition, PL emission from free excitons is found to be more intense from the O face than from the Zn face.

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“…1,2 Recently we have shown the advantages of using quaternary AlInGaN layers for the fabrication of high quality quantum structures [3][4][5] with strong UV emission at room temperature. 6 Due to an independent tunability of band gap and lattice constant the quaternary AlInGaN alloys provide an excellent vehicle for band engineering [7][8][9] and the investigation of strain and built-in electric field effects in quantum wells. 10 In this letter, we present a systematic study of the photoluminescence ͑PL͒ of quaternary AlInGaN MQW structures with a band to band emission at 320 nm.…”

mentioning

confidence: 99%

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

Kuokštis

Jun

Ryu

et al. 2001

Applied Physics Letters

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We report on observing a long-wavelength band in low-temperature photoluminescence (PL) spectrum of quaternary Al0.22In0.02Ga0.76N/Al0.38In0.01Ga0.61N multiple quantum wells (MQWs), which were grown over sapphire substrates by a pulsed atomic-layer epitaxy technique. By comparing the excitation-power density and temperature dependence of the PL spectra of MQWs and bulk quaternary AlInGaN layers, we show this emission band to arise from the carrier and/or exciton localization at the quantum well interface disorders. PL data for other radiative transitions in MQWs indicate that excitation-dependent spectra position is determined by screening of the built-in electric field.

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Wide-gap semiconductor InGaN and InGaAln grown by MOVPE

Cited by 254 publications

References 8 publications

Growth of Ga-face and N-face GaN films using ZnO Substrates

Growth of Ga-face and N-face GaN films using ZnO Substrates

Photoluminescence measurements from the two polar faces of ZnO

Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

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