Wide-Bandwidth InGaP-GaAs HBT Voltage-Controlled Oscillators in K- and Ku-Band

Chiong, Chau-Ching; Chang, Hong-Yeh; Chen, Ming-Tang

doi:10.1109/gsmm.2008.4534594

Cited by 5 publications

(3 citation statements)

References 18 publications

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“…The local oscillator to be used in the receiver is based on a wide-tuning range MMIC voltage controlled oscillator [23][24]. The MMIC VCO is designed and fabricated in an 2-µm InGaP-GaAs HBT process.…”

Section: Local Oscillatormentioning

confidence: 99%

Cryogenic testing and multi-chip module design of a 31.3-45GHz MHEMT MMIC-based heterodyne receiver for radio astronomy

et al. 2008

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A prototype Q-band millimeter-wave heterodyne receiver based on monolithic microwave integrated circuit (MMIC) chips is designed and tested. The MMIC chips, including two three-stage 31.3-45GHz low-noise amplifier (LNA), a diode balanced mixer and a 4-12GHz IF amplifier, are fabricated by a 0.15-um Gallium-Arsenide (GaAs) metamorphic high-electron mobility transistor (MHEMT) foundry service. The MMIC chips are measured by probe in the gain stage. The three-stage 31.3-45GHz LNA MMIC exhibits 31-35dB gain and 2.8-3.5dB noise figure under room temperature environment. The balanced diode mixer with 31.3-45.0GHz RF frequency range and 27.3-33GHz LO frequency range shows 10-13dB conversion loss under 10-dBm LO pumping over 4-12GHz IF frequency range. The LO power of the mixer is provided by a phase-locked GaAs hetero-junction bipolar transistor (HBT) MMIC voltage-controlled oscillator cascaded by a buffer amplifier. The packaged modules of the individual MHEMT MMIC receiver components are designed for testing under 15-20K cryogenic operating temperature to ensure the low-noise performance. A compact multi-chip receiver module design concept will be presented.

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Section: Local Oscillatormentioning

confidence: 99%

Cryogenic testing and multi-chip module design of a 31.3-45GHz MHEMT MMIC-based heterodyne receiver for radio astronomy

et al. 2008

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“…Voltage-controlled oscillators (VCOs) with wide tuning ranges are highly demanded for today's multi-standard and multiband communication systems to cut down the cost by reducing the required number of the VCO [1][2][3][4]. There are different ways to implement the VCO for wideband operation [5][6][7][8][9][10]. A ring type of oscillator has a wide tuning range but suffers from relative poor phase noise and larger power consumption [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…By using binary-weighted varactor bank, S. A. Osmany designed a VCO with 17% tuning range [7]. Through tuning varactors in both base node and emitter node of the HBT transistor, a VCO with wide tuning range of 21% was developed by Chiong et al [8]. Pohl et al achieved wideband VCO of 30% tuning range by using special designed varactors on a special process [9].…”

Section: Introductionmentioning

confidence: 99%

A Compact Size Low Power and Wide Tuning Range Vco Using Dual-Tuning Lc Tanks

Mou¹,

Ma²,

Yeo³

et al. 2012

PIER C

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A novel 12 GHz VCO designed and fabricated in a 0.18 µm SiGe BiCMOS technology is presented. Strongly magnetic coupled dual LC tanks with fixed and tunable capacitive elements are introduced to extend tuning range and improve phase noise. By hybrid using of varactor tuning, loaded transformer tuning and switched capacitor tuning, the proposed VCO achieves a wide tuning range of 4.3 GHz (36%) and output power of −9 dBm with only 4.5 mW power consumption and only 0.17 mm 2 chip area.

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