Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview

Fraga, Mariana Amorim; Furlan, Humber; Pessoa, Rodrigo Sávio; Massi, M.

doi:10.1007/s00542-013-2029-z

Cited by 120 publications

(54 citation statements)

References 64 publications

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“…Piezoresistive gauge factor comparable with the gauge factor of the main material of the semiconducting strain gauges silicon was reported [4][5][6][7][8][9][10]. Thus, in combination with the beneficial properties mentioned above, diamond like carbon films became an attractive material for fabrication of the advanced sensors capable to work in different harsh environments [14,[26][27][28][29][30][31][32].…”

Section: Introductionmentioning

confidence: 96%

Piezoresistive properties of diamond like carbon films containing copper

Meškinis

Gudaitis

Vasiliauskas

et al. 2015

Diamond and Related Materials

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Section: Introductionmentioning

confidence: 96%

Piezoresistive properties of diamond like carbon films containing copper

Meškinis

Gudaitis

Vasiliauskas

et al. 2015

Diamond and Related Materials

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“…The fundamental paradigm of this recent field of research is the exploitation of strain induced piezoelectric (PZ) polarization in semiconductor nanostructures to develop unique electronic devices in optoelectronics [2], mechanical sensing [3], piezoelectric transducers [4], transparent conductors [5] and energy harvesting nanogenerators (NGs) [6].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric field enhancement in III–V core–shell nanowires

et al. 2015

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Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semiconductors are calculated using ab-initio density functional theory. We show that the predicted magnitude of such coefficients is much larger than previously reported and of the same order of magnitude as those of III-N semiconductors. In order to show the applicability of wurtzite III-V semiconductors as piezoelectric materials, we model the bending distortion created on a nanowire by an atomic force microscope tip. We calculate the dependence of the piezoelectric properties of both homogeneous and core shell wurtzite III-V semiconductor structures on the induced deflection. We show that a number of combinations of III-V materials for the core and the shell of the nanowires can favor much increased voltage generation. We observe the largest core voltages in core/shell combinations of InAs/GaP, InP/GaP, GaP/InAs and GaP/InP which are predicted to be 3 orders of magnitude larger than the typical values of 73 V in homogeneous nanowires. Also considering properties such as voltage generation, bandgap discontinuity and mobility, III-V wurtzite core-shell nanowires are candidates for high performance components in piezotronics and nanogeneration.

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“…ZnO has many potential applications in many technological fields. ZnO possessing excellent optical transparency, piezoelectric properties, wide ranges of resistivity (10 −4 ÷ 10 10 Ω cm) and morphological forms becomes one of the key materials used to fabricate energy saving/harvesting/producing and micromechanical devices . In particular, Al doped ZnO (AZO) and Ga doped ZnO (GZO) transparent conducting thin films are the most important alternative materials to expensive and scarce Sn doped In 2 O 3 (ITO) for applications as transparent electrode in solar cell, flat screen displays, and other electro‐optical devices .…”

Section: Introductionmentioning

confidence: 99%

A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

Abduev

Akmedov

Асваров

et al. 2015

Plasma Processes & Polymers

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Ga-doped ZnO (GZO) thin films are recently raising both scientific and industrial interests, due to the lack of natural resources. Indium is a crucial raw material, due to ITO modern touchscreen market. By doping ZnO with Ga conductive transparent thin films with various concentrations of dopant are prepared by DC magnetron sputtering from ceramic targets. It is shown how the Ga content plays an important role on the growth kinetics on an initial stage of the film formation and hence on the morphologies, microstructure and electrical properties of as-grown GZO films. A mechanism explaining the role of Ga content on the nucleation process and the structure of growing films is proposed. Based on this mechanism, it is successfully demonstrated that the crystalline quality and hence the conductivity of GZO thin films can be improved by using a GZO buffer layer.

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Wide bandgap semiconductor thin films for piezoelectric and piezoresistive MEMS sensors applied at high temperatures: an overview

Cited by 120 publications

References 64 publications

Piezoresistive properties of diamond like carbon films containing copper

Piezoresistive properties of diamond like carbon films containing copper

Piezoelectric field enhancement in III–V core–shell nanowires

A Revised Growth Model for Transparent Conducting Ga Doped ZnO Films: Improving Crystallinity by Means of Buffer Layers

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