Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells

Ramiro, I.; Villa, Juan Luis; Lam, Phu; Hatch, Sabina; Wu, Jiang; López, E.; Antolín, E.; Liu, Huiyun; Martı́, Antonio; Ĺuque, A.

doi:10.1109/jphotov.2015.2402439

Cited by 59 publications

(26 citation statements)

References 32 publications

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“…The highest efficiency achieved by MBE was 18.32% in 2009 , but in all cases, the increase in current brought about by the QDs, as compared with a control cell made with the same structure and process while excluding the QD formation, is very small and has been accompanied by a reduction in the voltage with an overall reduction in efficiency. IB SCs have also been made with other QD/host semiconductors . Most of these experiments have been carried out using MBE.…”

Section: Introductionmentioning

confidence: 99%

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology

Kalyuzhnyy

Mintairov

Salii

et al. 2016

Progress in Photovoltaics

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Research into the formation of InAs quantum dots (QDs) in GaAs using the metalorganic vapor phase epitaxy technique is presented. This technique is deemed to be cheaper than the more often used and studied molecular beam epitaxy. The best conditions for obtaining a high photoluminescence response, indicating a good material quality, have been found among a wide range of possibilities. Solar cells with an excellent quantum efficiency have been obtained, with a sub-bandgap photo-response of 0.07 mA/cm per QD layer, the highest achieved so far with the InAs/GaAs system, proving the potential of this technology to be able to increase the efficiency of lattice-matched multi-junction solar cells and contributing to a better understanding of QD technology toward the achievement of practical intermediate-band solar cells.

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Section: Introductionmentioning

confidence: 99%

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology

Kalyuzhnyy

Mintairov

Salii

et al. 2016

Progress in Photovoltaics

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“…When phosphide materials are used as barrier layers for InAs QDs, the interface quality is often a problem due to the intermixing of As and P atoms. Therefore, a method for introducing a thin interlayer to improve the interface quality between QDs and barrier layers has been proposed [ 20 , 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

2021

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From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

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“…The effect of electric field on different layers of InAs/GaAs quantum dots was investigated by Yushuai et al in 2014 [11]. In 2015, Inigo et al designed the InAs/InGaP Quantum-Dot cell [12]. Utrilla et al increased the range of InAs/GaAs quantum dots in 2016 using semiconductors in InAs/GaAs cells [13].…”

Section: Introductionmentioning

confidence: 99%

Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

Abbasian

Sabbaghi‐Nadooshan

2020

FACTA U EE

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In this work, a GaAs-based quantum well solar cell with a 25-layer InAs/GaAs intermediate layer is simulated in Silvaco Atlas TCAD software. In order to reduce the recombination caused by the presence of the quantum layers and increase the absorption of photons, electron blocking layers (EBLs) and hole blocking layers (HBLs) have been added to the solar cell in an In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor. The results show that the efficiency of the proposed solar cell increases 17.38% by obtaining impurity the thickness and doping of the EBL and HBL layers. It can be concluded that the use of the In 0.5 (Al 0.7 Ga 0.3) 0.5 P semiconductor with EBL and HBL layers decreases the open circuit voltage (V oc) caused in the quantum wells. The efficiency of the proposed solar cell with EBL and HBL layers was found to be 44.65%.

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Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells

Cited by 59 publications

References 32 publications

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology

Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology

Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Study of hole-blocking and electron-blocking layers in a InaS/GaAs multiple quantum-well solar cell

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